際際滷shows by User: MuzafarRather / http://www.slideshare.net/images/logo.gif 際際滷shows by User: MuzafarRather / Thu, 22 Dec 2016 17:20:31 GMT 際際滷Share feed for 際際滷shows by User: MuzafarRather MOSFET and Short channel effects /slideshow/mosfet-and-short-channel-effects/70379558 mosfetshortchanneleffects-161222172031
Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.]]>

Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.]]>
Thu, 22 Dec 2016 17:20:31 GMT /slideshow/mosfet-and-short-channel-effects/70379558 MuzafarRather@slideshare.net(MuzafarRather) MOSFET and Short channel effects MuzafarRather Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects. <img style="border:1px solid #C3E6D8;float:right;" alt="" src="https://cdn.slidesharecdn.com/ss_thumbnails/mosfetshortchanneleffects-161222172031-thumbnail.jpg?width=120&amp;height=120&amp;fit=bounds" /><br> Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.
MOSFET and Short channel effects from Lee Rather
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RaceTrack memory /slideshow/racetrack-memory/70377912 racetrackmemory-161222162724
Racetrack a non volatile memory, where magnetic domains moves along a nanowire (about 100nm thick and 200nm long) using spin-coherent electric currents.]]>

Racetrack a non volatile memory, where magnetic domains moves along a nanowire (about 100nm thick and 200nm long) using spin-coherent electric currents.]]>
Thu, 22 Dec 2016 16:27:24 GMT /slideshow/racetrack-memory/70377912 MuzafarRather@slideshare.net(MuzafarRather) RaceTrack memory MuzafarRather Racetrack a non volatile memory, where magnetic domains moves along a nanowire (about 100nm thick and 200nm long) using spin-coherent electric currents. <img style="border:1px solid #C3E6D8;float:right;" alt="" src="https://cdn.slidesharecdn.com/ss_thumbnails/racetrackmemory-161222162724-thumbnail.jpg?width=120&amp;height=120&amp;fit=bounds" /><br> Racetrack a non volatile memory, where magnetic domains moves along a nanowire (about 100nm thick and 200nm long) using spin-coherent electric currents.
RaceTrack memory from Lee Rather
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https://public.slidesharecdn.com/v2/images/profile-picture.png https://cdn.slidesharecdn.com/ss_thumbnails/mosfetshortchanneleffects-161222172031-thumbnail.jpg?width=320&height=320&fit=bounds slideshow/mosfet-and-short-channel-effects/70379558 MOSFET and Short chann... https://cdn.slidesharecdn.com/ss_thumbnails/racetrackmemory-161222162724-thumbnail.jpg?width=320&height=320&fit=bounds slideshow/racetrack-memory/70377912 RaceTrack memory