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Construction of silicon cell

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Kaushal Kareliya

Silicon solar cells are constructed by slicing silicon semiconductor into thin wafers that are 300mm thick and circular, about 6 to 8mm in diameter. They have an anti-reflective silver oxide coating and a charge collecting grid made of titanium and silver to transport electricity through the cell to an external circuit. The cells operate by converting sunlight into electricity through a process where photons with energy levels above the material's band gap are absorbed by the silicon, allowing it to convert the light energy into electrical energy for use.

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Construction of silicon cell
Construction • Made from N type and P type silicon semiconductor sliced in thin wafers • Thickness about 300mm and less • Circular in shape with diameter 6 to 8mm • Anti reflecting coating of silver oxide • Charge collecting grid of titanium silver • Electricity flow through the charge collecting grid to terminal to external circuit • Protecting coating provided
(1) Band energy gap • IT IS PRINCIPLE OF CONVERSION OF SOLAR ENERGY INTO HEAT ENERGY • IF PHOTONS ENERGY < BAND ENERGY GAP THAN SEMICONDUCTOR UNABLE TO ABSORB ENERGY • IF PHOTONS ENERGY > BAND ENERGY GAP THAN SEMICONDUCTOR ABLE TO ABSORB ENERGY • EFFICIENCY OF SOLAR CELL IS ABOUT 10-15%
(2) CURRENT VOLTAGE CHARACTERISTIC • MAXIMUM USABLE POWER IS Vm Im • THEORITICAL POWER IS VOC ISC • FILL FACTOR = MAX USABLE POWER / THEORITICAL POWER
(3) EFFECT OF TEMP ON EFFICIENCY OF SOLAR CELL • RADIATION IS MORE  ELECTRIC ENERGY IS MORE • INITIALLY GIVES MORE ENERGY AFTER TEMP INCREASE EFFICIENCY DECREASES • TEMP. TOLERANCE 200 ͦC • LIFE OF SEMICONDUCTOR
(3) EFFECT OF TEMP ON EFFICIENCY OF SOLAR CELL • RADIATION IS MORE  ELECTRIC ENERGY IS MORE • INITIALLY GIVES MORE ENERGY AFTER TEMP INCREASE EFFICIENCY DECREASES • TEMP. TOLERANCE 200 ͦC • LIFE OF SEMICONDUCTOR

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Construction of silicon cell

  • 2. Construction • Made from N type and P type silicon semiconductor sliced in thin wafers • Thickness about 300mm and less • Circular in shape with diameter 6 to 8mm • Anti reflecting coating of silver oxide • Charge collecting grid of titanium silver • Electricity flow through the charge collecting grid to terminal to external circuit • Protecting coating provided
  • 3. (1) Band energy gap • IT IS PRINCIPLE OF CONVERSION OF SOLAR ENERGY INTO HEAT ENERGY • IF PHOTONS ENERGY < BAND ENERGY GAP THAN SEMICONDUCTOR UNABLE TO ABSORB ENERGY • IF PHOTONS ENERGY > BAND ENERGY GAP THAN SEMICONDUCTOR ABLE TO ABSORB ENERGY • EFFICIENCY OF SOLAR CELL IS ABOUT 10-15%
  • 4. (2) CURRENT VOLTAGE CHARACTERISTIC • MAXIMUM USABLE POWER IS Vm Im • THEORITICAL POWER IS VOC ISC • FILL FACTOR = MAX USABLE POWER / THEORITICAL POWER
  • 5. (3) EFFECT OF TEMP ON EFFICIENCY OF SOLAR CELL • RADIATION IS MORE  ELECTRIC ENERGY IS MORE • INITIALLY GIVES MORE ENERGY AFTER TEMP INCREASE EFFICIENCY DECREASES • TEMP. TOLERANCE 200 ͦC • LIFE OF SEMICONDUCTOR
  • 6. (3) EFFECT OF TEMP ON EFFICIENCY OF SOLAR CELL • RADIATION IS MORE  ELECTRIC ENERGY IS MORE • INITIALLY GIVES MORE ENERGY AFTER TEMP INCREASE EFFICIENCY DECREASES • TEMP. TOLERANCE 200 ͦC • LIFE OF SEMICONDUCTOR