The document presents a dissertation on the design of a low-voltage low-dropout regulator using a current splitting technique in 90nm CMOS technology. It outlines the objectives of power management and discusses conventional power converters including linear regulators and switching regulators. It then examines issues in low-dropout regulator design such as the pass transistor, error amplifier, and stability. Existing techniques to improve power supply rejection are analyzed along with their pros and cons. The problem statement and objectives of the proposed work are given as designing a regulator with a 1V input, 0.85-0.5V output, 60uA quiescent current, and 0.0041mm^2 area using a current splitting error amplifier technique. The tool, block
The document describes a multistage transistor amplifier. It defines a multistage amplifier as having multiple amplifier stages connected in series using coupling devices. It discusses different types of coupling devices like RC, RL, LC and transformer coupling. It explains the working of a typical multistage amplifier including how the gain is calculated as the product of individual stage gains. It describes how the frequency response varies with lower gains at very low and very high frequencies. Advantages include low cost and good frequency response. Disadvantages include increased noise over time and poor impedance matching. Multistage amplifiers are widely used as voltage amplifiers in audio applications.
The metaloxidesemiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. Although FET is sometimes used when referring to MOSFET devices, other types of field-effect transistors also exist.
This document discusses MOS transistor theory, including MOS structure, ideal and non-ideal I-V characteristics, capacitance models, and delay models. It describes how MOS transistors operate in different modes depending on terminal voltages and how carrier mobility and channel charge determine current in linear and saturation regions. Non-ideal effects like velocity saturation, body effect, and leakage currents are also covered. The document concludes with discussions of pass transistors, tri-state inverters, and using resistor-capacitor models to estimate delay.
This document discusses channel length modulation in MOSFETs. It explains that in saturation, the channel length decreases with increasing drain voltage due to the depletion region extending farther into the channel. This effectively reduces the channel length and increases the drain current. The document derives an expression for drain current that includes a channel length modulation coefficient to model this effect, showing that current increases with higher drain voltages due to the reduced channel length.
- The JFET is a voltage-controlled device that uses an electric field to control the flow of current. It has three terminals: the drain, gate, and source.
- There are two types of JFETs: n-channel and p-channel. In an n-channel JFET, applying a negative voltage to the gate reduces the channel width and thereby the current between the drain and source. In a p-channel JFET the behavior is opposite.
- The JFET characteristics show the drain current (ID) as a function of drain-source voltage (VDS) for different gate-source voltages (VGS). ID increases with VDS until reaching pinch-off, then becomes constant.
1. The document provides examples of using a Smith chart to solve transmission line problems involving impedance matching and locating voltage/current minima.
2. Key information extracted from measurements include VSWR, shift in voltage minima when terminating a line with a short, and load impedance.
3. The Smith chart is used to determine normalized load impedances, line impedances at various distances from the load, and stub parameters for matching a given load.
This document discusses current mirror circuits. It explains that a current mirror circuit outputs a constant current (I_out) that is equal to a reference current (I_ref) regardless of load or voltage variations. It works by using two identical transistors - one sets the reference current while the other mirrors it. Applications include requiring constant current, making multiple current sources from one, and stabilizing current against temperature changes.
THIS PPT IS PRESENTED TO PROF. RAVITESH MISHRA FROM EC FINAL YEAR STUDENTS MADE FROM RAZAVI,DESIGN OF ANALOG CMOS INTEGRATED CIRCUITS ON DATAPATH SUBSYSTEM-MULTIPLICATION
The unijunction transistor (UJT) is a three-terminal semiconductor device with a single PN junction. It exhibits a negative resistance characteristic, which makes it useful for oscillator circuits. The UJT consists of a lightly doped N-type silicon bar with a single P-type region forming the emitter junction. It has three terminals - base 1, base 2, and emitter. In its active mode, the UJT shows negative resistance, where increasing the emitter voltage initially causes the emitter current to decrease. This physical phenomenon is called conductivity modulation and is caused by injection of holes from the emitter into the base, decreasing the resistance between the emitter and base 1.
This document discusses different types of field effect transistors (FETs). It describes the junction field effect transistor (JFET) and its construction, advantages, and applications. The metal-oxide-semiconductor field effect transistor (MOSFET) is also discussed, including its construction, depletion and enhancement modes of operation, working principle, and applications such as switching and signal amplification. The document also briefly mentions other semiconductor devices like zener diodes, varactor diodes, and their applications.
This document compares the use of complementary pass-transistor logic (CPL) to conventional CMOS design. CPL uses fewer transistors than CMOS gates, has smaller capacitances, and is faster. A 2:1 multiplexer is designed using both CMOS and CPL in Microwind and DSCH2 layout tools. Simulation results show the CPL multiplexer has lower power consumption, smaller area, faster rise/fall delays compared to the CMOS multiplexer. Therefore, CPL offers advantages over conventional CMOS in terms of speed, area, and power-delay products.
This document discusses differential amplifiers, which measure the difference between two input signals and offer advantages like noise immunity. It describes the basic differential pair circuit and how loading it with resistors can improve linearity and differential gain. The document also covers analyzing differential amplifiers, including their differential and common-mode gains, as well as more advanced topics like using MOS loads and the Gilbert cell configuration.
This document presents an overview of operational amplifiers (op-amps). It begins with an introduction to op-amps, followed by their circuit symbol, pin diagram, important terms and equations. It describes the ideal properties of an op-amp, as well as non-ideal behaviors. Applications discussed include analog to digital converters, current sources, and zero crossing detectors. Advantages are listed as versatility and uses in various circuits. Disadvantages include limitations in power and load resistance.
IC Design of Power Management Circuits (I)Claudia Sin
油
by Wing-Hung Ki
Integrated Power Electronics Laboratory
ECE Dept., HKUST
Clear Water Bay, Hong Kong
www.ee.ust.hk/~eeki
International Symposium on Integrated Circuits
Singapore, Dec. 14, 2009
Power amplifiers are concerned with efficiency, maximum power capability, and impedance matching to the output device rather than small-signal factors like amplification, linearity, and gain. There are several classes of power amplifiers including Class A, B, AB, C, and D which differ based on the conduction angle of the output and location of the Q-point. Efficiency increases as the conduction angle decreases from Class A to Class B to Class C. Transformers can be used to improve efficiency and increase the output swing of Class A amplifiers. Push-pull configurations are used for Class B amplifiers to generate a full output cycle from two transistors.
CMOS design rules specify geometric constraints for circuit layouts including minimum line widths, feature dimensions, and separations between features. This ensures high manufacturing yield and reliability while minimizing silicon area usage. The rules determine minimum transistor sizes and separations between nMOS and pMOS transistors. Violating the rules can cause issues like increased resistance, open or short circuits during fabrication.
This document discusses the design of MEMS resonator systems with integrated readout circuitry. It first describes methods for extracting the threshold voltage of MOSFETs. It then covers the design of a differential amplifier, including determining its transconductance, voltage transfer characteristics, input common mode range, slew rate and frequency response. Next, it examines modeling an electromechanical nanocantilever sensor for mass detection. It provides equations for calculating small mass changes and the snap-in voltage of the cantilever-driver system. Finally, it presents the design process and SPICE simulation of a two-stage operational amplifier.
NMOS is nothing but negative channel metal oxide semiconductor; it is pronounced as en-moss. It is a type of semiconductor that charges negatively.
NMOS advantages, disadvantage, TTL, DTL
Communication Theory-1 Project || Single Side Band Modulation using Filtering...rameshreddybattini
油
Communication Theory-1 Project || Single Side Band Modulation using Filtering Method and Synchronous Demodulation in the Presence of Noise || Using Matlab Code
This document discusses silicon on insulator (SOI) technology. It begins by defining SOI as using a layered silicon-insulator-silicon substrate instead of conventional silicon substrates in semiconductor manufacturing. It then explains the differences between bulk silicon MOSFETs and SOI MOSFETs. The document discusses several manufacturing methods for SOI, including SIMOX, wafer bonding, and Smart Cut. It also covers the benefits of SOI such as lower parasitic capacitance and resistance to latch-up. Finally, it distinguishes between partially depleted SOI and fully depleted SOI devices.
This document discusses MOSFETs and JFETs. It introduces MOSFETs, describing the metal oxide layer and how the electric field controls current. It describes types of MOSFETs and their applications, particularly as switches. Characteristic curves of MOSFETs are also mentioned. The document then introduces JFETs, describing their structure and operation. Applications of JFETs as switches are provided. Advantages and disadvantages of JFETs are listed. Finally, characteristics curves of JFETs, including output and transfer characteristics, are described.
An oscillator is an electronic circuit that produces repetitive waveforms without an external input signal. It uses positive feedback to sustain oscillations, with the frequency determined by circuit components like inductors and capacitors. Common types include sinusoidal oscillators that produce sine waves, and relaxation oscillators that produce non-sinusoidal waves like square waves. Oscillators are essential components in many electronic devices and systems to generate stable frequency signals.
Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.
This document outlines the design procedure for a two-stage operational amplifier (op amp) using CMOS technology. It begins by listing the steps in designing any op amp and the design inputs and outputs. It then provides more details on the specific design procedure for a two-stage CMOS op amp, including determining the bias currents, transistor sizes, and compensation components to meet specifications for gain, bandwidth, output swing, power dissipation, and other parameters. The document concludes with a numerical example showing the step-by-step calculations to design a two-stage op amp to given specifications.
The document presents a master's thesis on designing a low-voltage low-dropout regulator using a current splitting technique in 90nm CMOS technology. The project aims to design an LDO that can convert an input of 1V to an output of 0.85-0.5V with a 1uF load and 60uA quiescent current. The initial circuit consumed 7.06mW of power which was reduced to 2.07mW by introducing an assistant push-pull output stage and class AB op-amp. The thesis concludes with future applications of LDO regulators requiring lower power consumption and tighter packaging constraints.
The unijunction transistor (UJT) is a three-terminal semiconductor device with a single PN junction. It exhibits a negative resistance characteristic, which makes it useful for oscillator circuits. The UJT consists of a lightly doped N-type silicon bar with a single P-type region forming the emitter junction. It has three terminals - base 1, base 2, and emitter. In its active mode, the UJT shows negative resistance, where increasing the emitter voltage initially causes the emitter current to decrease. This physical phenomenon is called conductivity modulation and is caused by injection of holes from the emitter into the base, decreasing the resistance between the emitter and base 1.
This document discusses different types of field effect transistors (FETs). It describes the junction field effect transistor (JFET) and its construction, advantages, and applications. The metal-oxide-semiconductor field effect transistor (MOSFET) is also discussed, including its construction, depletion and enhancement modes of operation, working principle, and applications such as switching and signal amplification. The document also briefly mentions other semiconductor devices like zener diodes, varactor diodes, and their applications.
This document compares the use of complementary pass-transistor logic (CPL) to conventional CMOS design. CPL uses fewer transistors than CMOS gates, has smaller capacitances, and is faster. A 2:1 multiplexer is designed using both CMOS and CPL in Microwind and DSCH2 layout tools. Simulation results show the CPL multiplexer has lower power consumption, smaller area, faster rise/fall delays compared to the CMOS multiplexer. Therefore, CPL offers advantages over conventional CMOS in terms of speed, area, and power-delay products.
This document discusses differential amplifiers, which measure the difference between two input signals and offer advantages like noise immunity. It describes the basic differential pair circuit and how loading it with resistors can improve linearity and differential gain. The document also covers analyzing differential amplifiers, including their differential and common-mode gains, as well as more advanced topics like using MOS loads and the Gilbert cell configuration.
This document presents an overview of operational amplifiers (op-amps). It begins with an introduction to op-amps, followed by their circuit symbol, pin diagram, important terms and equations. It describes the ideal properties of an op-amp, as well as non-ideal behaviors. Applications discussed include analog to digital converters, current sources, and zero crossing detectors. Advantages are listed as versatility and uses in various circuits. Disadvantages include limitations in power and load resistance.
IC Design of Power Management Circuits (I)Claudia Sin
油
by Wing-Hung Ki
Integrated Power Electronics Laboratory
ECE Dept., HKUST
Clear Water Bay, Hong Kong
www.ee.ust.hk/~eeki
International Symposium on Integrated Circuits
Singapore, Dec. 14, 2009
Power amplifiers are concerned with efficiency, maximum power capability, and impedance matching to the output device rather than small-signal factors like amplification, linearity, and gain. There are several classes of power amplifiers including Class A, B, AB, C, and D which differ based on the conduction angle of the output and location of the Q-point. Efficiency increases as the conduction angle decreases from Class A to Class B to Class C. Transformers can be used to improve efficiency and increase the output swing of Class A amplifiers. Push-pull configurations are used for Class B amplifiers to generate a full output cycle from two transistors.
CMOS design rules specify geometric constraints for circuit layouts including minimum line widths, feature dimensions, and separations between features. This ensures high manufacturing yield and reliability while minimizing silicon area usage. The rules determine minimum transistor sizes and separations between nMOS and pMOS transistors. Violating the rules can cause issues like increased resistance, open or short circuits during fabrication.
This document discusses the design of MEMS resonator systems with integrated readout circuitry. It first describes methods for extracting the threshold voltage of MOSFETs. It then covers the design of a differential amplifier, including determining its transconductance, voltage transfer characteristics, input common mode range, slew rate and frequency response. Next, it examines modeling an electromechanical nanocantilever sensor for mass detection. It provides equations for calculating small mass changes and the snap-in voltage of the cantilever-driver system. Finally, it presents the design process and SPICE simulation of a two-stage operational amplifier.
NMOS is nothing but negative channel metal oxide semiconductor; it is pronounced as en-moss. It is a type of semiconductor that charges negatively.
NMOS advantages, disadvantage, TTL, DTL
Communication Theory-1 Project || Single Side Band Modulation using Filtering...rameshreddybattini
油
Communication Theory-1 Project || Single Side Band Modulation using Filtering Method and Synchronous Demodulation in the Presence of Noise || Using Matlab Code
This document discusses silicon on insulator (SOI) technology. It begins by defining SOI as using a layered silicon-insulator-silicon substrate instead of conventional silicon substrates in semiconductor manufacturing. It then explains the differences between bulk silicon MOSFETs and SOI MOSFETs. The document discusses several manufacturing methods for SOI, including SIMOX, wafer bonding, and Smart Cut. It also covers the benefits of SOI such as lower parasitic capacitance and resistance to latch-up. Finally, it distinguishes between partially depleted SOI and fully depleted SOI devices.
This document discusses MOSFETs and JFETs. It introduces MOSFETs, describing the metal oxide layer and how the electric field controls current. It describes types of MOSFETs and their applications, particularly as switches. Characteristic curves of MOSFETs are also mentioned. The document then introduces JFETs, describing their structure and operation. Applications of JFETs as switches are provided. Advantages and disadvantages of JFETs are listed. Finally, characteristics curves of JFETs, including output and transfer characteristics, are described.
An oscillator is an electronic circuit that produces repetitive waveforms without an external input signal. It uses positive feedback to sustain oscillations, with the frequency determined by circuit components like inductors and capacitors. Common types include sinusoidal oscillators that produce sine waves, and relaxation oscillators that produce non-sinusoidal waves like square waves. Oscillators are essential components in many electronic devices and systems to generate stable frequency signals.
Reduced channel length cause departures from long channel behaviour as two-dimensional potential distribution and high electric fields give birth to Short channel effects.
This document outlines the design procedure for a two-stage operational amplifier (op amp) using CMOS technology. It begins by listing the steps in designing any op amp and the design inputs and outputs. It then provides more details on the specific design procedure for a two-stage CMOS op amp, including determining the bias currents, transistor sizes, and compensation components to meet specifications for gain, bandwidth, output swing, power dissipation, and other parameters. The document concludes with a numerical example showing the step-by-step calculations to design a two-stage op amp to given specifications.
The document presents a master's thesis on designing a low-voltage low-dropout regulator using a current splitting technique in 90nm CMOS technology. The project aims to design an LDO that can convert an input of 1V to an output of 0.85-0.5V with a 1uF load and 60uA quiescent current. The initial circuit consumed 7.06mW of power which was reduced to 2.07mW by introducing an assistant push-pull output stage and class AB op-amp. The thesis concludes with future applications of LDO regulators requiring lower power consumption and tighter packaging constraints.
The document describes a proposed low-voltage low-dropout (LDO) regulator using 90-nm CMOS technology. It converts an input of 1V to an output of 0.85-0.5V. Key features include a simple operational transconductance amplifier as the error amplifier with current splitting to boost gain and bandwidth. A power noise cancellation mechanism minimizes the power transistor size. A fast transient accelerator provides extra current during load transients. The proposed LDO achieves high efficiency, small output variation, and high power supply rejection while occupying a small area of only 0.0041 mm2.
This document outlines the sections and contents for a project report on designing a low-voltage low-dropout regulator. It includes sections for an abstract, introduction, literature survey, existing and proposed systems, advantages, requirements, diagrams, implementation, testing, conclusions, and references. Contact information and course offerings are also provided for i3e Technologies.
LOW VOLTAGE LOW DROPOUT REGULATOR USING CURRENT SPLITTING TECHNIQUEEditor IJMTER
油
We proposed a low voltage low dropout regulator that converts an input of 1 v to an
output of 0.85-0.5 v with 90-nm CMOS technology. Current splitting technique used to boost the
gain by using an error amplifier. A power noise cancellation mechanism is formed in the rail-to-rail
output stage of the error amplifier, to minimize the size of power MOS transistor. In this paper we
achieve a fast transient response, high power supply rejection, low dropout regulator, low voltage,
and small area. CMOS processes have been used in Large scale integrated circuits like LSI and
microprocessor they have been miniaturized constantly. Taking full advantage of the miniaturization
technology, CMOS linear regulators have become the power management ICs that are widely used in
portable electronics products to realize low profile, low dropout, and low supply current.
The document introduces the LT1965 low noise, low dropout linear regulator. It provides an overview of low dropout regulators and describes the key features of the LT1965, including its wide input voltage range of 1.8V to 20V, adjustable output voltage range of 1.2V to 19.5V, low noise of 40uV RMS, and various protection features. Application examples are provided, including using multiple regulators in parallel for higher output currents. Performance metrics like low dropout voltage and quiescent current are examined. The LT1965 is compared to similar regulators and additional resources for purchasing and support are listed.
*** No College Required: Active Duty Commissioning or Officers Program: LDO/CWO *** If you are an E-7 through E-9 with the desire to reach for one of the most demanding and satisfying positions in the Navy, the Limited Duty Officer or Chief Warrant Officer Commissioning Program may be for you.http://www.npc.navy.mil//LDO%20and%20CWO%20Recruit%20Your%
This document describes the design calculations for a low voltage dropout regulator to provide an output voltage of 3.3V from an input of 5V. It involves calculating the range of bias voltages and sizes of the transistors in the regulator circuit. Transistor widths are determined to keep transistors in saturation and ensure sufficient drive. The calculations result in transistor width and length values that are then simulated before and after layout to verify the regulator design meets specifications.
The document discusses low power design techniques in VLSI. It begins by explaining why low power has become important, especially with the rise of mobile devices. It then discusses the different sources of power consumption, including dynamic and static power. Several low power design techniques are covered, such as clock gating, multi-Vt libraries, multi-voltage design, and power gating. The document emphasizes analyzing power at the system level and using EDA tools to implement low power techniques throughout the design flow. Overall, it provides an overview of analyzing power consumption and the goals and methods of low power VLSI design.
Vlsi implementation of a programmable low drop out voltage regulatoreSAT Journals
油
This document summarizes the VLSI implementation of a programmable low drop-out voltage regulator. It begins by introducing low drop-out voltage regulators and their importance in applications requiring low noise and high accuracy power rails. It then discusses key design considerations for low voltage, low power LDO regulators including fast transient response, high power supply rejection, and programmability. The document presents the schematic and CMOS layout of the proposed 32nm programmable LDO regulator design. The design uses an operational transconductance amplifier as the error amplifier, along with a common-source amplifier and current-sourcing PMOS transistor in the output stage to achieve fast transient response while operating below 1V with low power consumption and program
This document proposes an open-slab, air-core inductor design for on-chip power conversion that can achieve over 90% efficiency. It summarizes that integrated power converters promise board space savings and performance benefits but on-chip inductors to date have had low quality factors limiting efficiency. The design targets a quality factor above 20 and low DC resistance ratio, which are required for over 90% buck converter efficiency. An open-slab air-core inductor is presented that achieves a quality factor of 25-35 from 200-300MHz using a simple BEOL copper process, meeting the challenging requirements. Simulations also project over 90% efficiency for a buck converter using this inductor design.
design and analysis of voltage controlled oscillatorvaibhav jindal
油
The document describes the design of a low power consumption and low phase noise voltage controlled oscillator (VCO). It aims to implement the design of a VCO presented in a base paper in 180nm technology and then 45nm technology to achieve lower phase noise results. The key steps include designing the schematic and layout of the VCO in Cadence Virtuoso, simulating and analyzing the power consumption and phase noise, and comparing the results to the base paper. The design uses a combination of cross-coupled and balanced VCO configurations along with a LC tank circuit to minimize phase noise. Future work involves completing the 180nm and 45nm designs and analyses to optimize for lower power and noise.
This document describes an IA-32 processor core designed to operate over a wide voltage range from near-threshold voltages to maximum voltage. Key points:
- The "Claremont" prototype core can operate from 0.5V to 1.1V, achieving a 4.5x reduction in energy per cycle at its optimal voltage of 0.45V compared to maximum voltage. It demonstrates reliable near-threshold voltage operation down to 0.38V.
- Novel circuit techniques like variation-aware logic pruning, interruptible sequentials, and 10T register files enable robust near-threshold operation. Multi-corner timing convergence and programmable delay buffers manage skew across the wide voltage range.
- The core
This document discusses high efficiency power amplifier technologies. It describes:
1) The requirements for future power amplifiers including high linearity, output power, bandwidth, and reduced energy consumption.
2) How switch-mode power amplifier technology using pulse width modulation can achieve up to 90% efficiency but is limited to low frequencies.
3) Different classes of switch-mode power amplifier operation (Class D, E, and F) and how they work to achieve high efficiency by minimizing voltage-current overlap losses.
4) Performance comparisons of different technologies like GaN and LDMOS transistors, noting advantages like bandwidth and efficiency of GaN for radio applications.
This document provides an overview of a seminar presentation on reducing overshoot voltage in Internet of Things (IoT) applications. The presentation introduces conventional techniques like overshoot reduction and dummy load that reduce overshoot but lower efficiency. It then describes an active energy recycling technique that stores excess energy in an inductor and recycles it, but has stability issues due to the need for precise timing. Finally, it proposes a multiphase active energy recycling technique that uses multiple inductors in parallel phases to continuously store and recycle energy, improving efficiency without requiring precise timing.
Two-Stage Power Conversion Architecture Suitable for Wide Range Input VoltageProjectsatbangalore
油
This paper proposes a two-stage power conversion architecture suitable for wide input voltage ranges. The architecture combines a soft-charging switched-capacitor pre-regulator stage to compress a wide input voltage range into a narrower intermediate range, with a high-frequency magnetic regulator stage. This merged two-stage topology enables high efficiency, power density, and power factor for applications up to 30W requiring wide input voltage regulation, such as LED drivers. The approach is demonstrated through implementations of a 25-200V dc-dc converter achieving 88-96% efficiency at 30W, and an ac-dc converter with 88% efficiency and 0.93 power factor at 8.4W from an AC line.
A LOW POWER, LOW PHASE NOISE CMOS LC OSCILLATORIJEEE
油
The document describes a low power, low phase noise CMOS LC oscillator designed and simulated using a 180nm CMOS technology. Key results include:
1) The oscillator achieves a phase noise of -96 dBc/Hz at 1MHz with a tuning range of 4.8-8.3 GHz by varying the control voltage from 0-2V.
2) It consumes 3.8mW of power at an output power of -8.92dBm.
3) Simulation results show the tuning range, output waveform, and phase noise performance meet design goals for a low power VCO for wireless applications like 5G.
A LOW POWER, LOW PHASE NOISE CMOS LC OSCILLATORIJEEE
油
In this paper a Double Cross Coupled Inductor capacitor based Voltage Control Oscillator (LC-VCO) is designed. In the proposed circuit the phase noise, tuning range with respect to control voltage, output power and the power dissipation of the circuit is analysed. Phase noise of approximate -96 dBc/Hz at frequency of 1MHz, frequency tuning range of 4.8 to 8.3 GHz (corresponding to 53.0% tuning range) obtained by varying the control voltage from 0 to 2.0 V, Output power of circuit -8.92 dBm at 50 Ohm resistance terminal and the power consumption of Circuit is 3.8 mW. This VCO are designed for 5.5 GHz. The circuit is designed on the UMC 180nm CMOS technology and all the simulation results are obtained using cadence SPECTRE Simulator.
Track 2 session 6 - st dev con 2016 - wireless charging technologies ST_World
油
The document summarizes wireless charging technologies including magnetic induction and magnetic resonance. It discusses Qi and PMA standards, describing transmitter and receiver architectures, power transfer control phases, and challenges. ST provides wireless charging solutions including the STWBC transmitter IC and STWLC receiver IC, with reference designs for 5W Qi and 1W wearable applications. ST expertise includes membership in standards alliances and integration of transmitters and receivers.
This document describes a buck converter subsystem and current sensing techniques. It contains the following key points:
1. The objective is to efficiently step down DC voltage while reducing ripple to produce a smooth output voltage, and to measure the inductor current.
2. The subsystem includes a circuit configuration, components, design equations, and current waveforms. Techniques for current sensing include simplified and advanced methods.
3. An advanced current sensing model uses a simplified inductor model with a parasitic resistance and capacitor to determine the inductor current based on the voltage across a sensing capacitor. Assumptions are provided for component values and tolerances.
This 3 sentence summary provides the key details about the document:
The document describes the design of a low-voltage low-dropout (LDO) voltage regulator that can operate from an input of 1V down to an output of 0.85V-0.5V. It uses a simple symmetric operational transconductance amplifier as the error amplifier with a current splitting technique to boost gain and bandwidth. Simulation results showed the proposed LDO regulator achieved 99.94% current efficiency, a 28mV output variation for a 0-100mA load transient, and 50dB power supply rejection from 0-100kHz, while only requiring an area of 0.0041mm2.
Design of a generating substation with the description of designing a transformer. Here we show some basic components of a substation. and we also show the parameters and calculation to design a transformer of a specific ratings.
Low Power Design Techniques for ASIC / SOC DesignRajesh_navandar
油
1. Low power techniques aim to reduce both dynamic and static/leakage power in integrated circuits. Dynamic power is reduced through techniques like lowering supply voltage and clock frequency, while leakage power is reduced by increasing transistor threshold voltage.
2. Power gating is a widely used technique that temporarily turns off unused circuit blocks to drastically reduce leakage power. It requires additional power switches and isolation cells to safely turn blocks on and off.
3. Multi-threshold CMOS uses both low and high threshold voltage transistors optimized for performance and leakage respectively. Further scaling presents new challenges as leakage power becomes dominant.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology.
The document describes several digital and analog layout projects completed using Cadence tools including Virtuoso Layout Editor and Assura Verification. For digital projects, standard cells like inverters and logic gates were designed using a 130nm TSMC process. Analog projects included a level shifter, operational amplifier, band gap reference, DAC, and PLL. Challenges involved routing with tight metal pitches, transistor matching, reducing parasitics, and separating analog and digital blocks to prevent noise transfer.
This document summarizes some key challenges for digital circuits related to process, voltage, and temperature variations. It discusses techniques to prevent latchup and electrostatic discharge issues in integrated circuits. It also describes simultaneous switching noise that can occur when large numbers of circuits switch simultaneously. The document proposes using adaptive body biasing techniques to compensate for PVT variations and control output slope under different conditions. Simulation results show this approach can adjust rising and falling times of an output buffer for different substrate bias voltage conditions.
Novel High Voltage Buck Boost ConverterIRJET Journal
油
This document presents a novel high voltage buck boost converter using a PI controller. The proposed converter can boost a low voltage DC input such as that from a renewable energy source to a higher required output voltage. It utilizes a snubber circuit and MOSFET switches to achieve soft switching and high efficiency compared to conventional buck boost converters. Simulation results show the converter can boost a 100V DC input to 500V DC output with very low power losses. The converter design and operation are described, along with conclusions that it achieves high efficiency through soft switching and energy recovery in the snubber circuit.
SOLID STATE TRANSFORMER - USING FLYBACK CONVERTERAbhin Mohan
油
FUTURISTIC ELECTRICAL ENGINEERING PROJECT.
A Device that can step up as well as step down coltage and get output as both DC or AC. Total flexibility of Power using DC link by Flyback Coverter.
SOLID STATE TRANSFORMER - USING FLYBACK CONVERTERAbhin Mohan
油
Devyani 1st Ext. Presentation
1. Dissertation Presentation
On
LOW-VOLTAGE LOW-DROPOUT REGULATOR
DEPARTMENT OF ELECTRONICS ENGINEERING
Prof. Sampat K.V. DEVYANI
HOD ECE 1309136702
Mrs.Sangeeta Mangesh M.Tech
ECE Dept. Adv. ECE
JSSATE Noida JSSATE - Noida
2. OUTLINE
Objective of Power Management
Basic Idea of Linear Regulator
Issues of Concern in LDOs
Existing Techniques Used, Pros and Cons based on
Literature survey in Detail.
Problem Statement
Project Objective
Parametric Objective
Tool Used
Block Diagram
Progress Till date
Proposed Work
Conclusion
Future Scope
References
3. POWER MANAGEMENT
Batteries discharge almost
linearly with time.
Circuits with reduced power
supply that are time
dependent operate poorly.
Optimal circuit performance
can not be obtained.
Objective of a power
converter is to provide a
regulated output voltage.
4. COVENTIONAL POWER CONVERTERS
Low dropout linear regulator (LDO)
Switchinductor regulator (switching regulators)
Switchcapacitor regulator (charge pump)
TYPES:
Different applications
Desired efficiency and output ripple
6. LOW VOLTAGE LOW DROPOUT REGULATOR
The LDO act as a variable resistor that is placed between
input power source and the load in order to drop and control
the voltage applied to the load.
Compared to DCDC switching regulators, LDOs are:
Of continuous operation
Easier to use
Cheaper solution
But of Lower efficiency
7. ISSUES OF CONCERN WITH LDO DESIGN
Pass transistor
load current will determine its size and thus layout
Error amplifier
The accuracy required by the LDO, determines the magnitude of the
open loop gain.
Single pole architectures are recommended for better and easier
stability.
The amp transient requirement is dependent on the stability i.e. gain
and phase margins. There is a tradeoff in making the PM high and
speed of amp. This is also true for the Gain.
Should have high PSRR
8. ISSUES OF CONCERN WITH LDO DESIGN
(CONTD)
Bandgap voltage reference
Should have high PSR
Stability and speed of the feedback loop
Should be assured under all load conditions
Choice of the capacitors and feedback resistors (Rf1 and Rf2) .
9. 1st HIGH PSR USING FEED FORWARD RIPPLE
CANCELLATION TECHNIQUE
MOTIVATION:
Problem:
Supply ripples affect Analog/RF blocks
Switching converter ripple frequencies are increasing
Solution: LDO with good PSR at higher operating frequencies
Challenges: Low dropout voltage, low quiescent current, small
area, high PSR across a wide frequency range
10. PSR DEGRADTION
PSR degrades at higher frequencies due to:
Finite GBW of feedforward amplifier (cancellation path)
Finite closed loop bandwidth
Finite self inductance (ESL) of offchip capacitor
11. PROPOSED ARCHITECTURE:
FEED FORWARD RIPPLE CANCELLATION (FFRC)
LDO
Main Idea:
Cancellation path replicates the ripples at gate of pass transistor
Gatesource overdrive voltage is free of ripple
12. 2nd CAPACITOR LESS LOW DROPOUT
VOLTAGE REGULATOR
Conventional LDOs are typically
implemented with at least one feedback
loop which is stabilized using a huge
external capacitor
LDOs is focused on removing this
external capacitor while maintaining
stability, good transient response and high
power supply rejection performance
Dominant pole
Conventional LDO Capacitor-Less LDO
Dominant pole
13. DESIGN CONSIDERATIONS IN CAPACITOR LESS
LDO
Stability (light loads)
Load Transient Response
Power Supply Rejection
14. CAPACITOR LESS LDO TOPOLOGIES
Capacitorless LDOs can be roughly divided into two main groups
based on the number of active loops.
Single Loop LDOs
Have at least three gain stages to increase the loop gain
Multiple Active Loop LDOs
Have two or more loops to enhance slew rate at the gate of the
pass transistor.
15. A SINGLE LOOP LDO ARCHITECTURE
Miller Compensation
Architecture [Leung03]
QReduction Architecture
[Lau07]
p1 << p2, p3
16. MULTI LOOPARCHITECTURES
1st Differentiator Architecture [Milliken07]
This topology enhances the
load transient response by
reducing the undershoots and
overshoots.
The onchip Miller Capacitor
is reduced a lot because of the
amplifier in the Differentiator
path and thus saving area
without sacrificing chip area.
17. MULTI LOOPARCHITECTURES (contd)
2nd MinimizedQ & Adaptive Zero Compensation (MQ&AZC)
[H.C. Yang08 ]
This topology has the advantage of being stable at very light loads
(50亮A),and phase margin of 60属 maintained over entiire range.
18. MULTI LOOPARCHITECTURES (contd)
3rd Transimpedance LDO [J.J. Chen07]
This topology has the advantage of very fast response to load & line
transients
19. COMMON DESIGN SPECIFICATIONS WITH
COMPARATIVE STUDIES
PARAMETERS SPECIFICATIONS
Vref 1.4 V
Vin 3.0 V
Vout 2.8 V
Pass Transistor Dimensions M=2000, W=18亮m and L=0.6亮m
GBW (open loop) 500 kHz
RF1 /RF2 100K立/100K立
Technology 0.5亮m
All the previously discussed capacitorless LDO architectures have
been designed using different technology processes or with different
design specifications.
As a result, it is very difficult to compare them
To fairly compare them the following common design specifications
are used:
20. PERFORMANCE SUMMARY ON COMPARISION
BASIS
*PSR results are for IL = 50mA
**Value extremely low to be measured
21. OTHER TECHNIQUES
Other Existing Techniques:
RC filtering
Cascading LDOs
Combined RC and cascading
Increasing Loop Bandwidth
Drawbacks:
Large area consumption
Large dropout voltage
High power consumption
All these techniques do not provide sufficient PSR at
frequencies up to required ripple frequencies
22. PROBLEM STATEMENT
Design Of Low-Voltage Low-Dropout Regulator Using
Current Splitting Technique And 90nm CMOS Technology
23. WHY CURRENT SPLITTING TECHNIQUE?
On Literature Survey Basis:
Primary switching regulators
Converts high dc voltage to low dc voltage with >90%
conversion efficiency.
Generate voltage ripples to minimize switching power loss.
Provide good PSR to suppress noise.
The drawback of these regulators are low power efficiency,
highly loaded circuits,high power consumption depends upon
load.
Inorder to overcome these drawbacks Current Splitting
Technique with OTA-EA and Low Iq is introduce which not
only provide high efficiency and low load but also
minimum area and low cost.
24. PROJECT OBJECTIVE
To Design a Low-Voltage Low-Dropout Regulator Using Current
Splitting Technique and 90nm CMOS Technology to achieve:
An input of 1 V and An output of 0.850.5 V
An Error Amplifier Current Splitting Technique
Load Capacitor 1亮F
Quiscent Current upto 60 亮A
Minimum Area of 0.0041 mm Square
25. PARAMETRIC OBJECTIVE
Design essential operating conditions and prameters are:
Technology (CMOS) 90 nm
Vdd/Vout (V) 1/0.85 1/0.5
Load Capacitor CL (亮F) 1
RESR (ohm) 1
Max. IQ (亮A) 60
Max. IOUT (mA) 100
Current Efficiency (%) 99.94 %
Load Regulation (mV/mA) 0.28 0.24
Output Variation in (mA)
@(IOUT1 IOUT2 in mA)
28
(0-100)
24
(0-100)
Response Time TR (亮s)* 0.28 0.24
PSR @ 100 kHz (dB) 48.1 >50
Area (mm Square) 0.0041
29. PROPOSED WORK
In this architecture not only minimize area (As Per Base Paper)
but also compact layout and calculation of power dissipation
and delay of the circuit inorder to get an efficient and stable
regulation with better performance is proposed.
30. CONCLUSION
LDO regulator using an EA for low IQ with , high PSR of ~50
dB, freq range 100kHz, 28-mV max output variation for a 0
100 mA load transient, and a 99.94% current efficiency should
be achieved.
The feasibility of LDO regulator should be verified using
Current Splitting Technique which is also helpful in compact
area of 0.0041 mm square.
31. FUTURE SCOPE
Further this can be used as compact architechture for
minimum area and low Iq current applications.
Minimum noise and Delay make this architecture a better
performer.
This minimization not only increase system efficiency and
stability but also reduce the overall cost of the system.
It can be use as best alternative for adaptive filtering.
32. REFRENCES
BASE PAPER: Chung-Hsun Huang, Member, IEEE, Ying-Ting
Ma, and Wei-Chen Liao, Deaign of a Low Voltage Low
Dropout Regulator, IEEE J. TRANSACTIONS ON VERY
LARGE SCALE INTEGRATION (VLSI) SYSTEMS , VOL. 22,
NO. 6, JUNE 2014.
[1] Y.-H. Lee, Y.-Y. Yang, K.-H. Chen, Y.-H. Lin, S.-J. Wang, K.-
L. Zheng, P.-F. Chen, C.-Y. Hsieh, Y.-Z. Ke, Y.-K. Chen, and
C.-C. Huang, A DVS embedded system power management
for high efficiency integrated SoC in UWB system, IEEE J.
Solid-State Circuits, vol. 45, no. 11, pp. 22272238, Nov.
2010.
[2] M. El-Nozahi, A. Amer, J. Torres, K. Entesari, and E.
Sanchez-Sinencio, High PSR low drop-out regulator with
feed-forward ripple cancellation technique, IEEE J. Solid-
State Circuits, vol. 45, no. 3, pp. 565577, Mar. 2010.
33. REFRENCES
[3] P. Hazucha, T. Karnik, B. A. Bloechel, C. Parsons, D. Finan,
and S. Borkar, Area-efficient linear regulator with ultra-fast
load regulation, IEEE J. Solid-State Circuits, vol. 40, no. 4,
pp. 993940, Apr. 2005.
[4] M. Al-Shyoukh, H. Lee, and R. Perez, A transient-enhanced
low- quiescent current low-dropout regulator with buffer
impedance attenuation, IEEE J. Solid-State Circuits, vol.
42, no. 8, pp. 17321742, Aug. 2007.
[5] Y.-H. Lam and W.-H. Ki, A 0.9 V 0.35 亮m adaptively
biased CMOS LDO regulator with fast transient response, in
Proc. IEEE Int. Solid- State Circuits Conf., Feb. 2008, pp.
442443, 626.
[6] H.-C. Lin, H.-H. Wu, and T.-Y. Chang, An active- frequency
compensation scheme for CMOS low-dropout regulators
with transient-response improvement, IEEE Trans.
Circuits Syst. II, Exp. Briefs, vol. 55, no. 9, pp. 853857, Sep.
2008.
34. [7] A. Garimella, M. W. Rashid, and P. M. Furth, Reverse nested
miller compensation using current Buffers in a three-stage
LDO, IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 57, no.
4, pp. 250254, Apr. 2010
[8] C. Chen, J. H. Wu, and Z. X. Wang, 150 mA LDO with self
adjusting frequency compensation scheme, Electron. Lett.,
vol. 47, no. 13, pp. 767768, Jun. 2011.
[9] J. Hu, B. Hu, Y. Fan, and M. Ismail, A 500 nA quiescent, 100
mA maximum load CMOS low-dropout regulator, in Proc.
IEEE Int. Conf. Electron. Circuits Syst., Dec. 2011, pp. 386
389.
[10] C. Zhan and W.-H. Ki, An adaptively biased low-dropout
regulator with transient enhancement, in Proc. Asia South
Pacific Design Autom. Conf., 2011, pp. 117118.
[11] Edgar S叩nchez-Sinencio, Low Drop-Out (LDO) Linear
Regulators : Design Considerations and Trends for High
Power Supply Rejection (PSR), IEEE Santa Clara Valley
(SCV) Solid State Circuits Society, February 2011.