Curriculum_Vitae_Final Version_2015_10_12
- 1. CurriculumVitae SHIN, SANG HOON Muhammad A. Alam Lab, Department of Engineering, School of Electrical and Computer Engineering, Purdue University Seng Liang Wang Hall, Room 2022, Northwestern Ave. West Lafayette, Indiana 47906, U.S.A Lab homepage: https://nanohub.org/groups/ashraf_alam E-mail: shin136@purdue.edu LinkedIn: https://www.linkedin.com/pub/sanghoon-shin/59/86/564 Voice: +1 765-430-1766 EDUCATION 2012.08 - Present 2010.10-2012.08 2003.03-2009.08 Purdue University Ph.D. student & Research Assistant, Electrical and Computer Engineering Academic Advisor: Muhammad A. Alam Research field: Reliability physics and Characterization of Transistors at the scaling limit, Self- heating effect, and Intermetal dielectric (IMD) for power device application The University of Tokyo M.S., Electrical Engineering and Information Systems, GPA: 3.63/4.0 Academic Advisor: Prof. Shinichi Takagi Research field: Characterization of MOS interfacial layer in Advanced MOSFETs Hanyang University B.S., Electronic Engineering and Computer Science, GPA: 3.84/4.0 AWARD Student Certification of Recognition in International Electron Device Meeting (2013) Best Poster Award in The 8th International Nanotechnology Conference (2012) Japanese Government Scholarship (MEXT, Ministry of education, culture, sports, science, and technology) (2010, 2011) University Division Scholarship for excellent academic performance (2003, 2004, 2008) ACHIVEMENT SangHoon Shin, N. Taoka, M. Takenaka, and S. Takagi, Quantitative Analysis of Surface Potential Fluctuation at MOS interfaces Using Conductance Method, Journal of Applied Physics (In progress). S. H. Shin, M. A. Wahab, W. J. Ahn, A. Ziabari, K. Maize, A. Shakouri, and M. A. Alam, Fundamental trade-off between Short-Channel Control and Hot Carrier Degradation in an ETSOI Technology, IEEE International Electron Devices Meeting (IEDM), Washington D.C., USA, Dec. 2015 (Accepted) (Highlighted by IEDM Technical Program). M. Wahab, S. H. Shin, and M. A. Alam, Spatio-temporal Heat-transport in III-V Gate-all- around Transistors to Allow Accurate Estimation and Optimization of Nanowire Temperature, IEEE Transactions on Electron Devices (In Press).
- 2. S. H. Shin, M. Masuduzzaman, and M. A. Alam, Characterizing Self-Heating Dynamics using Cyclostationary Measurements, IEEE Electron Device Letters (Under review). M. A. Alam, S. H. Shin, M. A. Wahab, M. Masuduzzaman, J. J. Gu. J. Zhang, P. D. Ye, Too hot to handle? The emerging challenge of self-heating, Electron Device Society (EDS) Seminar, San Jose, CA, USA, July, 2015. M. A. Wahab, S. H. Shin, J. J. Gu, P. D. Ye, and M. A. Alam, Self-consistent Analysis between Electro-thermal Model and Thermo-reflectance Measurement to Estimate Nanowire Temperature in a Multi-nanowires 3D Transistor, SRC Techcon, Austin Texas, USA, Sep 2015. S. H. Shin, M. Wahab, M. Masuduzzaman, K. Maize, J. J Gu, A. Shakouri, M. Si, P. D. Ye, and M. A. Alam, Direct Observation of Self-heating in III-V Gate-all-around Nanowire MOSFETs, IEEE Transactions on Electron Devices (In press) (Special Issue). M. Si, N. Conrad, S. H. Shin, J. J. Gu, J. Zhang, M. A. Alam and P. D. Ye, Low- Frequency Noise and RTN on Near-Ballistic III-V GAA Nanowire MOSFETs, IEEE Transactions on Electron Devices (In press) (Special Issue). M. Si, S. H. Shin, N. Conrad, J. J. Gu, J. Zhang and M. A. Alam, P. D. Ye, Characterization and Reliability of InGaAs Gate-all-around III-V MOSFETs, IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, Apr. 2015. S. H. Shin, M. Wahab, M. Masuduzzaman, K. Maize, J. J Gu, A. Shakouri, M. Si, P. D. Ye, and M. A. Alam, Direct Observation of Self-heating in III-V Gate-all-around Nanowire MOSFETs, IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, Dec. 2014 (Highlighted by IEDM Technical Program). N. Conrad, M. Si, S. H. Shin, J. J. Gu, J. Zhang, M. A. Alam and P. D. Ye, Low- Frequency Noise and RTN on Near-Ballistic III-V GAA Nanowire MOSFETs, IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, Dec. 2014. S. H. Shin, M. A. Wahab, M. Si, J.J. Gu, P. D. Ye, M. Masuduzzaman, and M. A. Alam, Origin and Implication of Hot Carrier Degradation of Gate-all-around III-V MOSFETs, IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA, June. 2014. S. H. Shin, M. Masuduzzaman, J.J Gu, M. A. Wahab, N. Conrad, M. Si, P. D. Ye, and M. A. Alam, Nanowire Variability Impact on Performance and Reliability of Gate-all-around III-V MOSFETs, IEEE International Electron Devices Meeting (IEDM), Washington D.C., USA, Dec. 2013. N. Conrad, SangHoon Shin, Jiangjiang Gu, Mengwei Si, Heng Wu, Muhammad Masuduzzaman, Muhammad A. Alam, and Peide D. Ye, Performance and Variability Studies of InGaAs Gate-all-around Nanowire MOSFETs, IEEE Transactions on Device and Materials Reliability, Vol 13, 4, pp489-496 2013 SangHoon Shin, N. Taoka, M. Takenaka, and S. Takagi, Quantitative Analysis of Surface Potential Fluctuation at MOS interfaces using Conductance method, The 2012 International Conference on Solid State Devices and Materials, Kyoto, Japan, Sep. 2012. SangHoon Shin, N. Taoka, M. Takenaka, and S. Takagi, Experimental Characterization of MOS Interface Charge using Surface Potential Fluctuation in Conductance Measurement, The 8th International Nanotechnology Conference (INC8) on Communcation and Cooperation, Tsukuba, Japan, May. 2012.
- 3. SangHoon Shin, N. Taoka, M. Takenaka, and S. Takagi, Experimental Characterization of Surface Potential Fluctuation in Conductance Measurement of Si MOSFETs, The 17th Gate Stack Workshop Special Research Society of The Japan Society of Applied Physics (JSAP), Torai, Japan, Jan. 2012. SangHoon Shin, N. Taoka, M. Takenaka, and S. Takagi, Effect of Positive charges on the surface potential fluctuation by using Fowler-Nordheim Injection, The Japan Society of Applied physics (JSAP) Japan Society of Applied Physics Autumn Meeting, Yamagata University, Japan, Aug-Sep. 2011. Caroline Sunyong Lee and SangHoon Shin (Equal Contribution), Current Status and Research Trend of Dye-Sensitized Solar Cell (DSSC), Trends in Metals and Materials Engineering, Vol 24, 1, pp15-25 2011. Yang-Hee Kim, Sang-Hoon Shin, Kwang-Soo Kim, Min-Saeng Kim, Doo-Man Chun, Lee Jong Cheon, Sung-Hoon Ahn, and Caroline Sunyong Lee, Study on Dye-Sensitized Solar Cell using TiO2 layer fabricated by Nano-Particle Deposition System, The Korean Institute of Metals and Materials, Hyundai Sungwoo Resort, Korea, Apr. 2011. Yang-Hee Kim, Sang-Hoon Shin, Kwang-Soo Kim, Min-Saeng Kim, Doo-Man Chun, Sung-Hoon Ahn, and Caroline Sunyong Lee, Fabrications of TiO2 Layers for Dye Sensitized Solar Cell using Nano-Particle deposition system (NPDS), International Union of Materials Research Societies - International Conference on Electronic Materials (IUMRS), KINTEX, Korea, Aug. 2010. RESEARCH EXPERIENCE AND TRAINING 2012.08-Present 2010.08-2012.08 2009.08-2010.03 Electrical and Computer Engineering at Purdue University USA Ph.D. student & Research Assistant, Conduct research about Reliability physics about Advanced (SOI and Nanowire) FETs and Inter-metal dielectrics under Professor: Muhammad A. Alam. Electrical Engineering and Information Systems at the University of Tokyo Japan Master Student, Conduct research about Interface of Semiconductors based on Strained Silicon, III-V, Ge/High-k under Professor: Shinichi Takagi. Multi Functional Materials & Devices Lab at Hanyang University Korea Research Assistant, Conducted research about Transparent Flexible Dye-sensitized Solar Cell fabricated by using nano particles laser deposition system (NPDS). 2008.12-2009.03 Micro Circuit and System Lab at Hanyang University Korea Research Assistant, Designed microwave circuit. Measured and Analyzed devices parameter by various analyzers. PROJECTS 2014.01-Present 2010.10-2012.08 Purdue University USA Research about reliability physics of high power device packaging and inter-metal dielectric supported by TI (Texas Instruments). The University of Tokyo Japan Research about characterization and analysis of MOS interfacial layer in Advanced MOSFET Supported by STARC (The Semiconductor Technology Academic Research Center-Research consortium of major Japanese semiconductor companies).
- 4. 2009.08-2010.03 Hanyang University Korea Dye-Sensitized Solar Cells fabricated by Laser-Assisted Nano Particle Deposition System Supported by the Ministry of Education, Science and Technology. RESEARCH INTERESTS Reliability physics of advanced transistor at scaling limit Self-heating effects High power device packaging (Inter-metal dielectric) Two dimensional material transistor reliability Fabrication of advanced Semiconductor devices SKILLS Fabrication: Optical Aligner, Mask Aligner, Atomic Layer Deposition (ALD), oxidation furnace, reactive ion etching (RIE), wet etching, metal evaporator, sputter, photolithography, Wire bonder, Chemical Mechanical polisher (CMP), Screen printing (sol-gel). Characterization: Remote control for any combination of instruments, Labview, Semiconductor Analyzer (Keithley 4200, Agilent B1500), High Voltage SMU (Keithley 2657A), LCR meter (Agilent E4980A), Dynamic signal analyzer (Agilent 35670A), Scanning Electron Microscope (SEM), Alpha-step, Solar simulator, etc. TCAD Simulation: Sentaurus, Medici, ANSYS, and HyENEXSS. REFERENCES Available upon request