Tzu-Ning received the Ph.D. degree from ECE of Carnegie Mellon University, and B.S. from National Tsing-Hua University in Taiwan. She starts working on investigating magnetic memory (MRAM) technology and cooperated with Motorola research group to develop the MRAM product.
From 2001, she had joined AMD strategic group to evaluate the emerging memory technology for future memory product. She led the team to design the testchip and developed memory array architecture for ReRAM memory technology. She had made significant contributions toward the development of CMOS compatible ReRAM technology. She discovered the thermal erase effect and construct model for ReRAM device with the results pub...
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