*20/28nm technology:
-High-K and metal gate process development & module integration:
a.Successfully develop Hf based gate stacks and meet device and reliability requirements.
b.Proposed integration scheme to achieve CMOS integration and resolve the gap fill issue due to Lg scaling. Provide the solution to extend Lg scaling.
c.Identify key process change of device body due to implementation of high-K/metal gate technology.
*32nm technology:
-High-K/metal gate first process development & module integration,demonstration of L32 High-K/Metal Gate device performance and improvement to meet customer鈥檚 request schedule.
*45nm technology:
-High-K/metal gate process development & module integr.
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