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Healthcare Technology Innovation Center(HTIC) 
IIT Madras
By Rohan Hajare
low power contollers
 Parameters
 Shutdown mode
 Standby mode
 Active mode
 Low power with RTC
 Low power with RAM retention
 Low power with Registers
 Wakeup Time/Clock Cycles
 Wakeup Sources
 Supply voltage range
 ULPM: 8 nA with backup registers
 ULPM + RTC: 200 nA with backup registers
 ULPM + 16 Kbytes of RAM: 170 nA
 ULPM + 16 Kbytes of RAM + RTC: 450 nA
 Dynamic run mode: down to 84 亮A/MHz
 Wake-up time: 5 亮s
 Low voltage 1.65volt to 3.6 volt
 5 wakeup pins
Power Mode STM32L083VZ
(192KB, 20KB, M0+)
STM32L162ZE
(512KB, 80KB, M3)
STM32L486
(1MB, 128KB, M4)
Standby mode 290nA 290nA 120nA
Standby + RTC - 1.11uA 420nA
Stop mode 430nA 560nA 1.1uA
Stop mode +
RTC
860nA 1.4uA 1.4uA
Sleep 4.6uA 4.6uA -,
30nA(shutdown)
Active 93uA/MHz 195uA/MHz 100uA/MHz
Wakeup Time 5us 8us 4us
Voltage 1.65V to 3.6V 1.65V to 3.6V 1.65V to 3.6V
 ULPM: 100 nA with 3V, RAM,BOR
 Sleep mode: 600nA
 Sleep mode with RTC: 1uA
 Deep Sleep mode: 20nA with 1.8V
 Active mode: 90uA/MHz
 Operating voltage 3.0volt
 Wakeup source: GPIO
 Wakeup Time :6us
Power Mode MSP432P401X
(256kB, 64kB, M4)
MSP430F5x
(512kB, 66kB)
MSP430L09x
(2kB, 2kB)
Active 90uA/MHz 195uA/MHz 45uA/MHz
Standby 500nA 500nA 6uA
LPM3 850nA 0.1uA(Stop mode
with RAM)
3uA (Stop mode)
LPM3.5 800nA
LPM4.5 25nA
Wakeup Time 6us <5us <1us
Voltage 1.62V to 3.6V 1.65V to 3.6V 0.9V to 1.65V
 Power consumption comparison with microchip
 M430F20xx = (0.6袖A  0.999) + (300袖A  0.001),
200mAh/0.009/24/365 = 25 years
 M430F26xx = (0.6袖A  0.999) + (515袖A  0.001),
200mAh/0.011/24/365 = 21 years
 P24F XLP = (0.8袖A  0.999) + (1110袖A  0.001),
200mAh/0.019/24/365 = 12 years
 C8051F96x
 130 袖A/MHz Active mode
 120 nA sleep mode with data retention
 450 nA sleep mode with SmaRTClock (internal
LFO)
 600 nA sleep mode with SmaRTClock (ext.
crystal)
 2 袖s wakeup time
 Operating voltage 3.6V
 Flash 128kB, RAM 8kB
 ATtiny43U
 Minimum battery cell voltage 0.7 volt
 PicoPower:
 Operating voltage 1.62V
 Power modes
 Serial communication and DMA transfer in sleep mode
 Dynamic sleepwalking
 Wakeup time is 8 clock cycles
 Atmel SMART ARM-based MCUs
 SAM L21
 ARM Cortex-M0+
 35 袖A/MHz in active move along with AES, capacitive
touch sensing
 SAM L22
 ARM Cortex-M0+
 39 袖A/MHz in active with Segment LCD (SLCD)
controller
 SAM4L
 ARM Cortex-M4
 90袖A/MHz in active mode
 TZ Series
 Operating voltages 1.2V, 1.1V, 1.0V, 0.9V
 Active mode: 150uA/MHz
 Sleep 0 mode: 89uA
 Sleep 1 mode: 87uA
 Sleep 2 mode: 74uA
 Wait mode: 20uA
 Retention mode: 8uA
 RTC mode
 Stop mode
 TXZ Series:
 Active mode 100uA/MHz
 ADuCM3027/29
 Active Mode 38uA/MHz
 Flexi mode < 11.5uA/MHz
 Hibernate (RAM Retention) 750nA
 Shutdown 60nA
 Operating Voltage 1.8V to 3.6V
 256kB flash, 4kB cache, 64kB SRAM
 FM0+ S6E1B-Series
 Active - 65袖A/MHz
 Standby - 600nA with RTC
 Wakeup time 30us
 Up to 560KB Flash, 64KB SRAM
 Voltage 1.65V to 3.6V
 MAX32620
 95亮A/MHz Active Executing from Flash
 600nA Low Power (LP0) Mode with RTC Enabled
 2.5亮A Ultra-Low Power Data Retention Mode (LP1)
 Fast 5亮s Wakeup to 96MHz
 Peripheral Management Unit (PMU)
 1.2V Operating Voltage
 2Mb flash, 256KB RAM, 8KB cache in 3.9x3.9mm package
Microcontroller Active Mode
Current
Cortex series Flash , RAM,
cache
MAX32620 95uA/MHz M4F 2MB, 256KB, 0KB
ADuCM3027/29 38uA/MHz M3 256KB, 64KB, 4KB
TZ Series 150uA/MHz M4F(BLE) 1MB, 288Kb, 0KB
MSP432P401X 90uA/MHz M4F 256kB, 64kB, 0KB
STM32L486 100uA/MHz M4 1MB, 128KB, 0KB
S6E1B 65uA/MHz M0+ 560KB, 64KB,0KB
 Max32620 is the best choice when the designer wants
the ultra low power consumption with more flash and
RAM in the single package
 ADuCM3027/9 is best when designer want ultra low
power and medium RAM memory size
 Toshiba TZ series is the best solution for wearable
device design where designer requires the BLE
embedded in the controller and consumes the ultra low
power with more flash and RAM memory
low power contollers

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low power contollers

  • 1. Healthcare Technology Innovation Center(HTIC) IIT Madras By Rohan Hajare
  • 3. Parameters Shutdown mode Standby mode Active mode Low power with RTC Low power with RAM retention Low power with Registers Wakeup Time/Clock Cycles Wakeup Sources Supply voltage range
  • 4. ULPM: 8 nA with backup registers ULPM + RTC: 200 nA with backup registers ULPM + 16 Kbytes of RAM: 170 nA ULPM + 16 Kbytes of RAM + RTC: 450 nA Dynamic run mode: down to 84 亮A/MHz Wake-up time: 5 亮s Low voltage 1.65volt to 3.6 volt 5 wakeup pins
  • 5. Power Mode STM32L083VZ (192KB, 20KB, M0+) STM32L162ZE (512KB, 80KB, M3) STM32L486 (1MB, 128KB, M4) Standby mode 290nA 290nA 120nA Standby + RTC - 1.11uA 420nA Stop mode 430nA 560nA 1.1uA Stop mode + RTC 860nA 1.4uA 1.4uA Sleep 4.6uA 4.6uA -, 30nA(shutdown) Active 93uA/MHz 195uA/MHz 100uA/MHz Wakeup Time 5us 8us 4us Voltage 1.65V to 3.6V 1.65V to 3.6V 1.65V to 3.6V
  • 6. ULPM: 100 nA with 3V, RAM,BOR Sleep mode: 600nA Sleep mode with RTC: 1uA Deep Sleep mode: 20nA with 1.8V Active mode: 90uA/MHz Operating voltage 3.0volt Wakeup source: GPIO Wakeup Time :6us
  • 7. Power Mode MSP432P401X (256kB, 64kB, M4) MSP430F5x (512kB, 66kB) MSP430L09x (2kB, 2kB) Active 90uA/MHz 195uA/MHz 45uA/MHz Standby 500nA 500nA 6uA LPM3 850nA 0.1uA(Stop mode with RAM) 3uA (Stop mode) LPM3.5 800nA LPM4.5 25nA Wakeup Time 6us <5us <1us Voltage 1.62V to 3.6V 1.65V to 3.6V 0.9V to 1.65V
  • 8. Power consumption comparison with microchip M430F20xx = (0.6袖A 0.999) + (300袖A 0.001), 200mAh/0.009/24/365 = 25 years M430F26xx = (0.6袖A 0.999) + (515袖A 0.001), 200mAh/0.011/24/365 = 21 years P24F XLP = (0.8袖A 0.999) + (1110袖A 0.001), 200mAh/0.019/24/365 = 12 years
  • 9. C8051F96x 130 袖A/MHz Active mode 120 nA sleep mode with data retention 450 nA sleep mode with SmaRTClock (internal LFO) 600 nA sleep mode with SmaRTClock (ext. crystal) 2 袖s wakeup time Operating voltage 3.6V Flash 128kB, RAM 8kB
  • 10. ATtiny43U Minimum battery cell voltage 0.7 volt PicoPower: Operating voltage 1.62V Power modes Serial communication and DMA transfer in sleep mode Dynamic sleepwalking Wakeup time is 8 clock cycles
  • 11. Atmel SMART ARM-based MCUs SAM L21 ARM Cortex-M0+ 35 袖A/MHz in active move along with AES, capacitive touch sensing SAM L22 ARM Cortex-M0+ 39 袖A/MHz in active with Segment LCD (SLCD) controller SAM4L ARM Cortex-M4 90袖A/MHz in active mode
  • 12. TZ Series Operating voltages 1.2V, 1.1V, 1.0V, 0.9V Active mode: 150uA/MHz Sleep 0 mode: 89uA Sleep 1 mode: 87uA Sleep 2 mode: 74uA Wait mode: 20uA Retention mode: 8uA RTC mode Stop mode TXZ Series: Active mode 100uA/MHz
  • 13. ADuCM3027/29 Active Mode 38uA/MHz Flexi mode < 11.5uA/MHz Hibernate (RAM Retention) 750nA Shutdown 60nA Operating Voltage 1.8V to 3.6V 256kB flash, 4kB cache, 64kB SRAM
  • 14. FM0+ S6E1B-Series Active - 65袖A/MHz Standby - 600nA with RTC Wakeup time 30us Up to 560KB Flash, 64KB SRAM Voltage 1.65V to 3.6V
  • 15. MAX32620 95亮A/MHz Active Executing from Flash 600nA Low Power (LP0) Mode with RTC Enabled 2.5亮A Ultra-Low Power Data Retention Mode (LP1) Fast 5亮s Wakeup to 96MHz Peripheral Management Unit (PMU) 1.2V Operating Voltage 2Mb flash, 256KB RAM, 8KB cache in 3.9x3.9mm package
  • 16. Microcontroller Active Mode Current Cortex series Flash , RAM, cache MAX32620 95uA/MHz M4F 2MB, 256KB, 0KB ADuCM3027/29 38uA/MHz M3 256KB, 64KB, 4KB TZ Series 150uA/MHz M4F(BLE) 1MB, 288Kb, 0KB MSP432P401X 90uA/MHz M4F 256kB, 64kB, 0KB STM32L486 100uA/MHz M4 1MB, 128KB, 0KB S6E1B 65uA/MHz M0+ 560KB, 64KB,0KB
  • 17. Max32620 is the best choice when the designer wants the ultra low power consumption with more flash and RAM in the single package ADuCM3027/9 is best when designer want ultra low power and medium RAM memory size Toshiba TZ series is the best solution for wearable device design where designer requires the BLE embedded in the controller and consumes the ultra low power with more flash and RAM memory