際際滷

際際滷Share a Scribd company logo

D1113 hitachi ignition

H
Hugo Nelson Parra

This document provides specifications for the 2SD1113(K) silicon NPN triple diffused transistor. It can be used as an igniter and is housed in a TO-220AB package. The document includes maximum ratings, electrical characteristics, typical output characteristics, and dimensions. It also provides cautions for use and contact information.

1 of 5
2SD1113(K) Silicon NPN Triple Diffused Application Igniter Outline TO-220AB 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 6 k (Typ) 450 (Typ) 1 2 3 Absolute Maximum Ratings (Ta = 25属C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V Collector current IC 6 A Collector peak current IC(peak) 10 A Collector power dissipation PC*1 40 W Junction temperature Tj 150 属C Storage temperature Tstg 55 to +150 属C Note: 1. Value at TC = 25属C. www.datasheet4u.com
2SD1113(K) 2 Electrical Characteristics (Ta = 25属C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 300 500 V IC = 0.1 mA, IE = 0 Collector to emitter sustain voltage VCEO(sus) 300 V IC = 3 A, PW = 50 袖s, f = 50 Hz, L = 10 mH Emitter to base breakdown voltage V(BR)EBO 7 V IE = 50 mA, IC = 0 Collector cutoff current ICEO 100 袖A VCE = 300 V, RBE = DC current transfer ratio hFE 500 VCE = 2 V, IC = 4 A*1 Collector to emitter saturation voltage VCE(sat) 1.5 V IC = 4 A, IB = 40 mA*1 Base to emitter saturation voltage VBE(sat) 2.0 V IC = 4 A, IB = 40 mA*1 Turn on time ton 2.0 袖s IC = 4 A, IB1 = IB2 = 40 mA Turn off time toff 23 袖s IC = 4 A, IB1 = IB2 = 40 mA Note: 1. Pulse test. 0 50 100 150 Case temperature TC (属C) CollectorpowerdissipationPc(W) Maximum Collector Dissipation Curve 20 40 60 0.005 0.01 0.1 1.0 50 10 Collector to emitter voltage VCE (V) CollectorcurrentIC(A) 0.5 1.0 2 5 10 20 50 100200 500 Area of Safe Operation iC (peak) IC (max) PW =10ms PW =1ms DCOperation Ta = 25属C 1 shot pulse www.datasheet4u.com
2SD1113(K) 3 Collector to emitter voltage VCE (V) CollectorcurrentIC(A) 0 Typical Output Characteristics 1 2 3 4 5 1 2 3 4 5 TC = 25属C IB = 0 0.2 mA 0.6 0.8 1.0 0.4 100 200 500 1,000 2,000 5,000 10,000 Collector current IC (A) DCcurrenttransferratiohFE 0.1 0.2 0.5 1.0 2 5 10 DC Current Transfer Ratio vs. Collector Current T C = 75属C 25 25 VCE = 2 V Pulse 0.1 0.2 0.5 1.0 2 5 10 Collector current IC (A) 0.1 0.2 0.5 1.0 2 5 10 CollectortoemittersaturationvoltageVCE(sat)(V) BasetoemittersaturationvoltageVBE(sat)(V) Saturation Voltage vs. Collector Current VBE (sat) VCE (sat) lC = 200 lB TC = 25属C Pulse www.datasheet4u.com
0.5 賊 0.12.54 賊 0.5 0.76 賊 0.1 14.0賊0.515.0賊0.3 2.79賊0.218.5賊0.57.8賊0.5 10.16 賊 0.2 2.54 賊 0.5 1.26 賊 0.15 4.44 賊 0.2 2.7 MAX 1.5 MAX 11.5 MAX 9.5 8.0 1.27 6.4 +0.2 0.1 3.6 +0.1 -0.08 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Unit: mm www.datasheet4u.com
Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Europe GmbH Electronic components Group Dornacher Stra則e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 For further information write to: www.datasheet4u.com

More Related Content

D1113 hitachi ignition

  • 1. 2SD1113(K) Silicon NPN Triple Diffused Application Igniter Outline TO-220AB 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 6 k (Typ) 450 (Typ) 1 2 3 Absolute Maximum Ratings (Ta = 25属C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V Collector current IC 6 A Collector peak current IC(peak) 10 A Collector power dissipation PC*1 40 W Junction temperature Tj 150 属C Storage temperature Tstg 55 to +150 属C Note: 1. Value at TC = 25属C. www.datasheet4u.com
  • 2. 2SD1113(K) 2 Electrical Characteristics (Ta = 25属C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 300 500 V IC = 0.1 mA, IE = 0 Collector to emitter sustain voltage VCEO(sus) 300 V IC = 3 A, PW = 50 袖s, f = 50 Hz, L = 10 mH Emitter to base breakdown voltage V(BR)EBO 7 V IE = 50 mA, IC = 0 Collector cutoff current ICEO 100 袖A VCE = 300 V, RBE = DC current transfer ratio hFE 500 VCE = 2 V, IC = 4 A*1 Collector to emitter saturation voltage VCE(sat) 1.5 V IC = 4 A, IB = 40 mA*1 Base to emitter saturation voltage VBE(sat) 2.0 V IC = 4 A, IB = 40 mA*1 Turn on time ton 2.0 袖s IC = 4 A, IB1 = IB2 = 40 mA Turn off time toff 23 袖s IC = 4 A, IB1 = IB2 = 40 mA Note: 1. Pulse test. 0 50 100 150 Case temperature TC (属C) CollectorpowerdissipationPc(W) Maximum Collector Dissipation Curve 20 40 60 0.005 0.01 0.1 1.0 50 10 Collector to emitter voltage VCE (V) CollectorcurrentIC(A) 0.5 1.0 2 5 10 20 50 100200 500 Area of Safe Operation iC (peak) IC (max) PW =10ms PW =1ms DCOperation Ta = 25属C 1 shot pulse www.datasheet4u.com
  • 3. 2SD1113(K) 3 Collector to emitter voltage VCE (V) CollectorcurrentIC(A) 0 Typical Output Characteristics 1 2 3 4 5 1 2 3 4 5 TC = 25属C IB = 0 0.2 mA 0.6 0.8 1.0 0.4 100 200 500 1,000 2,000 5,000 10,000 Collector current IC (A) DCcurrenttransferratiohFE 0.1 0.2 0.5 1.0 2 5 10 DC Current Transfer Ratio vs. Collector Current T C = 75属C 25 25 VCE = 2 V Pulse 0.1 0.2 0.5 1.0 2 5 10 Collector current IC (A) 0.1 0.2 0.5 1.0 2 5 10 CollectortoemittersaturationvoltageVCE(sat)(V) BasetoemittersaturationvoltageVBE(sat)(V) Saturation Voltage vs. Collector Current VBE (sat) VCE (sat) lC = 200 lB TC = 25属C Pulse www.datasheet4u.com
  • 4. 0.5 賊 0.12.54 賊 0.5 0.76 賊 0.1 14.0賊0.515.0賊0.3 2.79賊0.218.5賊0.57.8賊0.5 10.16 賊 0.2 2.54 賊 0.5 1.26 賊 0.15 4.44 賊 0.2 2.7 MAX 1.5 MAX 11.5 MAX 9.5 8.0 1.27 6.4 +0.2 0.1 3.6 +0.1 -0.08 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Unit: mm www.datasheet4u.com
  • 5. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Europe GmbH Electronic components Group Dornacher Stra則e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 For further information write to: www.datasheet4u.com