Diodos
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This document provides specifications for a silicon PIN photodiode with a daylight filter. It lists key characteristics such as operating temperature range, reverse voltage, total power dissipation, spectral sensitivity range, photocurrent and open-circuit voltage as functions of irradiance, dark current as a function of reverse voltage and temperature, and capacitance as a function of reverse voltage. It also includes typical applications such as IR remote controls and photointerrupters.
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Diodos
- 1. FICHA TCNICA DEL DIODO LED
- 4. Ficha t辿cnica del diodo zener tipo CARACTERISTICAS ELECTRICAS Rz Iz (袖)(v) Rz Iz mV/CmA -1 -2 -3 min max min max min max 05W2 1.6 1.8 1.7 1.9 1.8 2.0 25 -1.5
- 5. Type Marking Pin Configuration Package BB 804 SFs 1 = A1 2 = A2 3=C1/2 SOT-23 Parameter Symbol Value Unit Diode reverse voltage VR 18 V Peak reverse voltage VRM 20 Forward current IF 50 mA Operating temperature range Top 100 属C Storage temperature Tstg -55 ... 150 Silicon Variable Capacitance Diode 3 For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes Uniform "square law" characteristics Ideal HiFi tuning device when used in low-distortion, back-to-back configuration 2 1 VPS05161 3 1 2 EHA07004 Maximum Ratings FICHA TECNICA DEL DIODO VARICAP
- 6. Parameter Symbol Values Unit min. typ. max. Reverse current VR = 16 V IR - - 20 nA Reverse current VR = 16 V, TA = 65 属C IR - - 200 Diode capacitance VR = 2 V, f = 1 MHz CT 42 - 47.5 pF Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz CT2/CT8 1.65 1.71 - - Series resistance VR = 2 V, f = 100 MHz rs - 0.18 - Q factor VR = 2 V, f = 100 MHz Q - 200 - - Temperatur coefficient of CT VR = 2 V, f = 1 MHz TCc - 330 - ppm/K Diode capacitance 1) VR = 2V, f = 1MHz Subgroup: 0 1 2 3 4 CT 42 43 44 45 46 - - - - - 43.5 44.5 45.5 46.5 47.5 pF Electrical Characteristics at TA = 25属C, unless otherwise specified. DC characteristics AC characteristics
- 7. CT1V CT CT2V CT Diode capacitance CT = f (VR) f = 1MHz Capacitance ratio CTref / CT = f (VR) per diode, Vref = parameter, f = 1MHz EHD07051EHD07050 80 pF 70 3 CT refC T CT 60 2 50 40 30 1 20 10 0 0 10-1 100 101 V 102 VR 0 5 10 15 V VR 20 Temperature coefficient TCc = f (VR), per diode, f = 1MHz 10-3 1 K EHD07052 TCC 10-4 10-5 10 -1 100 101 10 2 V VR
- 8. Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT BP 104 F BP 104 FS 5.4 Cathodemarking 4.9 4.5 Chipposition 4.0 3.7 4.3 0.6 0.6 0.4 0.4 0.5 0.3 0.8 0.6 0... 5 5.08mm spacing Photosensitivearea 2.20mmx2.20mm Approx.weight0.1g GEO06075 Chip position 1.1 0.9 6.7 6.2 4.5 4.3 1.6 1.2 Photosensitive area 2.20mmx2.20mm Cathodelead GEO06861 1. 6 1. 2 0. 6 0. 4 1. 2 1. 1 0...0. 1 0. 9 0. 7 1. 2 0. 7 0. 3 0. 8 0. 61. 7 1. 5 4. 0 3. 7 0. 2 0. 1 0. 6 0. 4 2. 2 1. 9 3. 5 3. 0 feo0607 5 FICHA TECNICA DE UN FOTO DIODO
- 9. Typ (*vorher) Type (*formerly) Bestellnummer Ordering Code BP 104 F (*BP 104 ) Q62702-P84 BP 104 FS Q62702-P1646 Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg 40 ... + 85 C Sperrspannung Reverse voltage VR 20 V Verlustleistung, TA = 25 C Ptot 150 mW BP 104 F BP 104 FS Wesentliche Merkmale Features Speziell geeignet f端r Anwendungen bei 950 nm kurze Schaltzeit (typ. 20 ns) DIL-Plastikbauform mit hoher Packungs- dichte BP 104 FS: geeignet f端r Vapor-Phase L旦ten und IR-Reflow L旦ten Especially suitable for applications of 950 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density BP 104 FS: suitable for vapor-phase and IR-reflow soldering Anwendungen IR-Fernsteuerung von Fernseh- und Rundfunkger辰ten, Videorecordern, Lichtdimmern, Ger辰tefernsteuerungen Lichtschranken f端r Gleich- und Wechsellichtbetrieb Applications IR remote control of hi-fi and TV sets, video tape recorders, dimmers, remote controls of various equipment Photointerrupters Grenzwerte Maximum Ratings
- 10. Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Temperaturkoeffizient von VO Temperature coefficient of VO TCV 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.18 %/K Rausch辰quivalente Strahlungsleistung Noise equivalent power VR = 10 V NEP 3.6 1014 W Hz Nachweisgrenze, VR = 10 V Detection limit D* 6.1 1012 cm 揃 Hz W BP 104 F BP 104 FS Kennwerte (TA = 25 C, = 950 nm) Characteristics (contd)
- 11. C 60 pF 50 40 30 20 10 0 BP 104 F BP 104 FS Relative spectral sensitivity Srel = f () Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) Total power dissipation Ptot = f (TA) OHF00368 OHF01056 4 10 OHF00958 103 A 100 Srel % 160 mW 140 mV PtotP VO 102 103 120 VO 100 60 101 102 80 60P 100 101 40 20 20 10-1 1000 0 nm 700 800 900 1000 1200 100 101 102 W/cm2 104 0 20 40 60 80 C 100 TAEe Dark current IR = f (VR), E = 0 Capacitance C = f (VR), f = 1 MHz, E = 0 Dark current IR = f (TA), VR = 10 V, E = 0 OHF01778 OHF00082OHFD1781 10 3 R nA 8000 pA R 10 2 6000 10 1 4000 100 2000 10-1 0 10-2 10-1 100 101 V 102 0 20 40 60 80 C 100 TA 0 10 20 30 V 40 VRVR Directional characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 0.280 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120