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Diodos

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Pedro Walter Monja Nino
Pedro Walter Monja Nino

This document provides specifications for a silicon PIN photodiode with a daylight filter. It lists key characteristics such as operating temperature range, reverse voltage, total power dissipation, spectral sensitivity range, photocurrent and open-circuit voltage as functions of irradiance, dark current as a function of reverse voltage and temperature, and capacitance as a function of reverse voltage. It also includes typical applications such as IR remote controls and photointerrupters.

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FICHA TCNICA DEL DIODO LED
Diodos
Diodos
Ficha t辿cnica del diodo zener tipo CARACTERISTICAS ELECTRICAS Rz Iz (袖)(v) Rz Iz mV/CmA -1 -2 -3 min max min max min max 05W2 1.6 1.8 1.7 1.9 1.8 2.0 25 -1.5
Type Marking Pin Configuration Package BB 804 SFs 1 = A1 2 = A2 3=C1/2 SOT-23 Parameter Symbol Value Unit Diode reverse voltage VR 18 V Peak reverse voltage VRM 20 Forward current IF 50 mA Operating temperature range Top 100 属C Storage temperature Tstg -55 ... 150 Silicon Variable Capacitance Diode 3 For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes Uniform "square law" characteristics Ideal HiFi tuning device when used in low-distortion, back-to-back configuration 2 1 VPS05161 3 1 2 EHA07004 Maximum Ratings FICHA TECNICA DEL DIODO VARICAP
Parameter Symbol Values Unit min. typ. max. Reverse current VR = 16 V IR - - 20 nA Reverse current VR = 16 V, TA = 65 属C IR - - 200 Diode capacitance VR = 2 V, f = 1 MHz CT 42 - 47.5 pF Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz CT2/CT8 1.65 1.71 - - Series resistance VR = 2 V, f = 100 MHz rs - 0.18 - Q factor VR = 2 V, f = 100 MHz Q - 200 - - Temperatur coefficient of CT VR = 2 V, f = 1 MHz TCc - 330 - ppm/K Diode capacitance 1) VR = 2V, f = 1MHz Subgroup: 0 1 2 3 4 CT 42 43 44 45 46 - - - - - 43.5 44.5 45.5 46.5 47.5 pF Electrical Characteristics at TA = 25属C, unless otherwise specified. DC characteristics AC characteristics
CT1V CT CT2V CT Diode capacitance CT = f (VR) f = 1MHz Capacitance ratio CTref / CT = f (VR) per diode, Vref = parameter, f = 1MHz EHD07051EHD07050 80 pF 70 3 CT refC T CT 60 2 50 40 30 1 20 10 0 0 10-1 100 101 V 102 VR 0 5 10 15 V VR 20 Temperature coefficient TCc = f (VR), per diode, f = 1MHz 10-3 1 K EHD07052 TCC 10-4 10-5 10 -1 100 101 10 2 V VR
Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT BP 104 F BP 104 FS 5.4 Cathodemarking 4.9 4.5 Chipposition 4.0 3.7 4.3 0.6 0.6 0.4 0.4 0.5 0.3 0.8 0.6 0... 5 5.08mm spacing Photosensitivearea 2.20mmx2.20mm Approx.weight0.1g GEO06075 Chip position 1.1 0.9 6.7 6.2 4.5 4.3 1.6 1.2 Photosensitive area 2.20mmx2.20mm Cathodelead GEO06861 1. 6 1. 2 0. 6 0. 4 1. 2 1. 1 0...0. 1 0. 9 0. 7 1. 2 0. 7 0. 3 0. 8 0. 61. 7 1. 5 4. 0 3. 7 0. 2 0. 1 0. 6 0. 4 2. 2 1. 9 3. 5 3. 0 feo0607 5 FICHA TECNICA DE UN FOTO DIODO
Typ (*vorher) Type (*formerly) Bestellnummer Ordering Code BP 104 F (*BP 104 ) Q62702-P84 BP 104 FS Q62702-P1646 Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg 40 ... + 85 C Sperrspannung Reverse voltage VR 20 V Verlustleistung, TA = 25 C Ptot 150 mW BP 104 F BP 104 FS Wesentliche Merkmale Features Speziell geeignet f端r Anwendungen bei 950 nm kurze Schaltzeit (typ. 20 ns) DIL-Plastikbauform mit hoher Packungs- dichte BP 104 FS: geeignet f端r Vapor-Phase L旦ten und IR-Reflow L旦ten Especially suitable for applications of 950 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density BP 104 FS: suitable for vapor-phase and IR-reflow soldering Anwendungen IR-Fernsteuerung von Fernseh- und Rundfunkger辰ten, Videorecordern, Lichtdimmern, Ger辰tefernsteuerungen Lichtschranken f端r Gleich- und Wechsellichtbetrieb Applications IR remote control of hi-fi and TV sets, video tape recorders, dimmers, remote controls of various equipment Photointerrupters Grenzwerte Maximum Ratings
Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Temperaturkoeffizient von VO Temperature coefficient of VO TCV 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.18 %/K Rausch辰quivalente Strahlungsleistung Noise equivalent power VR = 10 V NEP 3.6 1014 W Hz Nachweisgrenze, VR = 10 V Detection limit D* 6.1 1012 cm 揃 Hz W BP 104 F BP 104 FS Kennwerte (TA = 25 C, = 950 nm) Characteristics (contd)
C 60 pF 50 40 30 20 10 0 BP 104 F BP 104 FS Relative spectral sensitivity Srel = f () Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) Total power dissipation Ptot = f (TA) OHF00368 OHF01056 4 10 OHF00958 103 A 100 Srel % 160 mW 140 mV PtotP VO 102 103 120 VO 100 60 101 102 80 60P 100 101 40 20 20 10-1 1000 0 nm 700 800 900 1000 1200 100 101 102 W/cm2 104 0 20 40 60 80 C 100 TAEe Dark current IR = f (VR), E = 0 Capacitance C = f (VR), f = 1 MHz, E = 0 Dark current IR = f (TA), VR = 10 V, E = 0 OHF01778 OHF00082OHFD1781 10 3 R nA 8000 pA R 10 2 6000 10 1 4000 100 2000 10-1 0 10-2 10-1 100 101 V 102 0 20 40 60 80 C 100 TA 0 10 20 30 V 40 VRVR Directional characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 0.280 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120

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Diodos

  • 1. FICHA TCNICA DEL DIODO LED
  • 4. Ficha t辿cnica del diodo zener tipo CARACTERISTICAS ELECTRICAS Rz Iz (袖)(v) Rz Iz mV/CmA -1 -2 -3 min max min max min max 05W2 1.6 1.8 1.7 1.9 1.8 2.0 25 -1.5
  • 5. Type Marking Pin Configuration Package BB 804 SFs 1 = A1 2 = A2 3=C1/2 SOT-23 Parameter Symbol Value Unit Diode reverse voltage VR 18 V Peak reverse voltage VRM 20 Forward current IF 50 mA Operating temperature range Top 100 属C Storage temperature Tstg -55 ... 150 Silicon Variable Capacitance Diode 3 For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes Uniform "square law" characteristics Ideal HiFi tuning device when used in low-distortion, back-to-back configuration 2 1 VPS05161 3 1 2 EHA07004 Maximum Ratings FICHA TECNICA DEL DIODO VARICAP
  • 6. Parameter Symbol Values Unit min. typ. max. Reverse current VR = 16 V IR - - 20 nA Reverse current VR = 16 V, TA = 65 属C IR - - 200 Diode capacitance VR = 2 V, f = 1 MHz CT 42 - 47.5 pF Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz CT2/CT8 1.65 1.71 - - Series resistance VR = 2 V, f = 100 MHz rs - 0.18 - Q factor VR = 2 V, f = 100 MHz Q - 200 - - Temperatur coefficient of CT VR = 2 V, f = 1 MHz TCc - 330 - ppm/K Diode capacitance 1) VR = 2V, f = 1MHz Subgroup: 0 1 2 3 4 CT 42 43 44 45 46 - - - - - 43.5 44.5 45.5 46.5 47.5 pF Electrical Characteristics at TA = 25属C, unless otherwise specified. DC characteristics AC characteristics
  • 7. CT1V CT CT2V CT Diode capacitance CT = f (VR) f = 1MHz Capacitance ratio CTref / CT = f (VR) per diode, Vref = parameter, f = 1MHz EHD07051EHD07050 80 pF 70 3 CT refC T CT 60 2 50 40 30 1 20 10 0 0 10-1 100 101 V 102 VR 0 5 10 15 V VR 20 Temperature coefficient TCc = f (VR), per diode, f = 1MHz 10-3 1 K EHD07052 TCC 10-4 10-5 10 -1 100 101 10 2 V VR
  • 8. Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT BP 104 F BP 104 FS 5.4 Cathodemarking 4.9 4.5 Chipposition 4.0 3.7 4.3 0.6 0.6 0.4 0.4 0.5 0.3 0.8 0.6 0... 5 5.08mm spacing Photosensitivearea 2.20mmx2.20mm Approx.weight0.1g GEO06075 Chip position 1.1 0.9 6.7 6.2 4.5 4.3 1.6 1.2 Photosensitive area 2.20mmx2.20mm Cathodelead GEO06861 1. 6 1. 2 0. 6 0. 4 1. 2 1. 1 0...0. 1 0. 9 0. 7 1. 2 0. 7 0. 3 0. 8 0. 61. 7 1. 5 4. 0 3. 7 0. 2 0. 1 0. 6 0. 4 2. 2 1. 9 3. 5 3. 0 feo0607 5 FICHA TECNICA DE UN FOTO DIODO
  • 9. Typ (*vorher) Type (*formerly) Bestellnummer Ordering Code BP 104 F (*BP 104 ) Q62702-P84 BP 104 FS Q62702-P1646 Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg 40 ... + 85 C Sperrspannung Reverse voltage VR 20 V Verlustleistung, TA = 25 C Ptot 150 mW BP 104 F BP 104 FS Wesentliche Merkmale Features Speziell geeignet f端r Anwendungen bei 950 nm kurze Schaltzeit (typ. 20 ns) DIL-Plastikbauform mit hoher Packungs- dichte BP 104 FS: geeignet f端r Vapor-Phase L旦ten und IR-Reflow L旦ten Especially suitable for applications of 950 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density BP 104 FS: suitable for vapor-phase and IR-reflow soldering Anwendungen IR-Fernsteuerung von Fernseh- und Rundfunkger辰ten, Videorecordern, Lichtdimmern, Ger辰tefernsteuerungen Lichtschranken f端r Gleich- und Wechsellichtbetrieb Applications IR remote control of hi-fi and TV sets, video tape recorders, dimmers, remote controls of various equipment Photointerrupters Grenzwerte Maximum Ratings
  • 10. Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Temperaturkoeffizient von VO Temperature coefficient of VO TCV 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.18 %/K Rausch辰quivalente Strahlungsleistung Noise equivalent power VR = 10 V NEP 3.6 1014 W Hz Nachweisgrenze, VR = 10 V Detection limit D* 6.1 1012 cm 揃 Hz W BP 104 F BP 104 FS Kennwerte (TA = 25 C, = 950 nm) Characteristics (contd)
  • 11. C 60 pF 50 40 30 20 10 0 BP 104 F BP 104 FS Relative spectral sensitivity Srel = f () Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) Total power dissipation Ptot = f (TA) OHF00368 OHF01056 4 10 OHF00958 103 A 100 Srel % 160 mW 140 mV PtotP VO 102 103 120 VO 100 60 101 102 80 60P 100 101 40 20 20 10-1 1000 0 nm 700 800 900 1000 1200 100 101 102 W/cm2 104 0 20 40 60 80 C 100 TAEe Dark current IR = f (VR), E = 0 Capacitance C = f (VR), f = 1 MHz, E = 0 Dark current IR = f (TA), VR = 10 V, E = 0 OHF01778 OHF00082OHFD1781 10 3 R nA 8000 pA R 10 2 6000 10 1 4000 100 2000 10-1 0 10-2 10-1 100 101 V 102 0 20 40 60 80 C 100 TA 0 10 20 30 V 40 VRVR Directional characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 0.280 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120