Hetero junction
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The document discusses heterojunctions and p-n junctions. It defines a heterojunction as the interface between two dissimilar semiconductors with different band gaps. There are three types of heterojunctions based on band alignment: type I where bands straddle, type II where bands are staggered, and type III where there is a broken gap. A p-n heterojunction diode forms when a p-doped and n-doped semiconductor meet; electrons flow from the higher to lower Fermi level side and holes in the opposite direction.
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![ENERGY BAND ALIGNMENT
ï‚— The behaviour of a semiconductor junction depends
crucially on the alignment of the energy bands at the
interface. Semiconductor interfaces can be organized
into three types of heterojunctions: straddling gap
(type I), staggered gap (type II) or broken gap (type
III) as seen in the figure[9]. Away from the junction,
the band bending can be computed based on the
usual procedure of solving Poisson's equation.](https://image.slidesharecdn.com/hetero-junction-200202153801/85/Hetero-junction-3-320.jpg)
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Hetero junction
- 1. Energy band diagrams of a Hetero-junction under equilibrium and a p-n junction under High forward bias J.YOGAPRABHA
- 2. HETERO-JUNCTION ï‚— A heterojunction is the interface that occurs between two layers or regions of dissimilar crystalline semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. ï‚— The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably. The requirement that each material be a semiconductor with unequal band gaps is somewhat loose, especially on small length scales, where electronic properties depend on spatial properties. ï‚— A more modern definition of heterojunction is the interface between any two solid-state materials, including crystalline and amorphous structures of metallic, insulating, fast ion conductor and semiconducting materials.
- 3. ENERGY BAND ALIGNMENT ï‚— The behaviour of a semiconductor junction depends crucially on the alignment of the energy bands at the interface. Semiconductor interfaces can be organized into three types of heterojunctions: straddling gap (type I), staggered gap (type II) or broken gap (type III) as seen in the figure[9]. Away from the junction, the band bending can be computed based on the usual procedure of solving Poisson's equation.
- 4. The three types of semiconductor heterojunctions organized by band alignment.
- 5. Introduction: Most interesting semiconductor devices usually have two or more different kinds of semiconductorsThere are four different kinds of commonly encountered heterostructures: a) pn heterojunction diode b) nn heterojunctions c) pp heterojunctions d) Quantum wells, quantum wires, and quantum dots A pn Heterojunction Diode: Consider a junction of a p-doped semiconductor (semiconductor 1) with an n-doped semiconductor (semiconductor 2). The two semiconductors are not necessarily the same, e.g. 1 could be AlGaAs and 2 could be GaAs. We assume that 1 has a wider band gap than 2. The band diagrams of 1 and 2 by themselves are shown below.
- 6. Semiconductor P-N Heterojunction Once a junction is made: • Electrons will flow from the side with higher Fermi level (1) to the side with lower Fermi level (2) • Holes will flow from the side with lower Fermi level (2) to the side with higher Fermi level (1)