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To evaluate the energy band gap of Silicon through the study of forward bias characteristicsTrisha Banerjee _bhu @ 2010
Apparatus:-            (IN  4007 ) Silicon diode, regulated 10 V dc power supply ,   2 V range DVM ( digital volt meter) , fast  temperature  controlled   oven, thermometer, milliamp range ammeter.A circuit diagram associate with the experiment:-Variable high resistance in seriespn junction diodeDVMPower supplyMilliammeterTrisha Banerjee _bhu @ 2010
Brief procedure about the experiment:-1)    initially we measure the diode current in forward bias at room temperature using the given diode kit.    2) secondly we measure the variation in voltage with the variation in temperature using the diode kit and the temperature controlling oven where the silicon diode is already dipped.    3) now using the particular slopes of the different characteristics graphs obtained by these variations  we finally got the energy band gap of the diode dipped in oil bath.Trisha Banerjee _bhu @ 2010
voltmeterammeterKnob for adjusting the voltagediodeHigh resistance in seriesTrisha Banerjee _bhu @ 2010
DVM (Digital voltmeter)  for measuring the voltage of the              voltmeterTrisha Banerjee _bhu @ 2010
Different graphs for determine the different slopesGraph for the slope of S1(i.e.forward characteristics of diode)Graph for the slope S2 (i.e.. variation of voltage with temperature of diode).
Fast temperature controlling oven:-Thermometer for measure the temperatureIndicator for coolingIndicator for heatKnob for ranging the temperature to heat
NOTES:-         1) initially totally switched off the oven  , as the temperature initial increase the slow down of temperature is very difficult process as take much time.          2) get the forward bias characteristics with the variation of current with voltage in DVM.            3)now for the variation of voltage with temperature we have to very fast and accurate as for low temperature the variation is very fast and difficult to notice .            4) now for temperature detection the oven operating should be well known . For this experiment we set the ammeter to 2mAand switch off the diode kit .  now raise the temperature about 5 points to the room temp . Till the cooling  red light will be blow off and just when it reach the 5 points inc.  temp the heat button glow then switched off the  oven and then when the mercury stables note down the temperature and diode voltage from DVM at 2 mA constant current.Trisha Banerjee _bhu @ 2010

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Oil Bath Exp

  • 1. To evaluate the energy band gap of Silicon through the study of forward bias characteristicsTrisha Banerjee _bhu @ 2010
  • 2. Apparatus:- (IN 4007 ) Silicon diode, regulated 10 V dc power supply , 2 V range DVM ( digital volt meter) , fast temperature controlled oven, thermometer, milliamp range ammeter.A circuit diagram associate with the experiment:-Variable high resistance in seriespn junction diodeDVMPower supplyMilliammeterTrisha Banerjee _bhu @ 2010
  • 3. Brief procedure about the experiment:-1) initially we measure the diode current in forward bias at room temperature using the given diode kit. 2) secondly we measure the variation in voltage with the variation in temperature using the diode kit and the temperature controlling oven where the silicon diode is already dipped. 3) now using the particular slopes of the different characteristics graphs obtained by these variations we finally got the energy band gap of the diode dipped in oil bath.Trisha Banerjee _bhu @ 2010
  • 4. voltmeterammeterKnob for adjusting the voltagediodeHigh resistance in seriesTrisha Banerjee _bhu @ 2010
  • 5. DVM (Digital voltmeter) for measuring the voltage of the voltmeterTrisha Banerjee _bhu @ 2010
  • 6. Different graphs for determine the different slopesGraph for the slope of S1(i.e.forward characteristics of diode)Graph for the slope S2 (i.e.. variation of voltage with temperature of diode).
  • 7. Fast temperature controlling oven:-Thermometer for measure the temperatureIndicator for coolingIndicator for heatKnob for ranging the temperature to heat
  • 8. NOTES:- 1) initially totally switched off the oven , as the temperature initial increase the slow down of temperature is very difficult process as take much time. 2) get the forward bias characteristics with the variation of current with voltage in DVM. 3)now for the variation of voltage with temperature we have to very fast and accurate as for low temperature the variation is very fast and difficult to notice . 4) now for temperature detection the oven operating should be well known . For this experiment we set the ammeter to 2mAand switch off the diode kit . now raise the temperature about 5 points to the room temp . Till the cooling red light will be blow off and just when it reach the 5 points inc. temp the heat button glow then switched off the oven and then when the mercury stables note down the temperature and diode voltage from DVM at 2 mA constant current.Trisha Banerjee _bhu @ 2010