Ppt on annual report
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This document summarizes research on indium sulfide thin films. It discusses that thin films can range from nanometers to micrometers thick and buffer layers are used between materials to accommodate differences in crystal structure. It then provides details on indium sulfide, including its direct band gap of 2.1 eV, tetragonal structure, and use in photovoltaics as a substitute for cadmium sulfide. The document describes depositing indium sulfide thin films and characterizing their optical properties using UV-Vis spectrophotometry, finding the band gap varies from 2.06eV to 2.57eV depending on film thickness.
Ppt on annual report
- 1. Sonu Choudhary Under the Supervision of Dr. M. S. Dhaka Department of Physics University College of Science MLS University Udaipur
- 2. Introduction Thin film Buffer layer Indium Sulfide thin film Deposition Technique Characterization Technique
- 3. Solar energy creates electricity and heat which avoids pollution as compared to the conventional coal plants and nuclear plants. Thin-films encompass a considerable thickness range, varying from few nanometers to tens of micrometers. A layer sandwiched between two single crystal materials to accommodate difference in their crystallographic structures is called buffer layer. Buffer layer (p or n type) is used to create the junction with the absorber layer with minimum absorption losses and to drive the generated carries to the electrode
- 5. Its a III-VI group semiconductor. The direct band gap of In2S3 is 2.1 eV. Structure: Tetragonal Melting Point: 1050C Red Solid appearance (Color) Due to its stability, large band gap and photoconducting properties it is used in photovoltaic, picture tubes for colour televisions and dry cells. It could be used as an effective nontoxic substitute for cadmium sulfide (CdS) in CIGS based solar cells. This material not only eliminates toxic cadmium but also improves light transmission in the blue wavelength region due to wider energy band gap than the CdS
- 8. The optical properties of as-grown In2S3 films were carried out employing UV-Vis spectrophotometer. The optical band gap is found to be varied from 2.06eV to 2.57eV and found to be decreased with film thickness
- 9. The extinction coefficient (k) was calculated from the absorption coefficient using following relation.