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Solar cell eciency tables (version 11)

Mostafa Elaasser
Mostafa Elaasser

This document consolidates tables showing the highest independently confirmed efficiencies for various solar cell and module technologies. It provides guidelines for including results in the tables and describes new entries since June 1997. The tables summarize the best measured efficiencies for cells, submodules, modules, and concentrator cells/modules from various test centers under standard test conditions. Relatively few new results were included in this version of the tables.

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SHORT COMMUNICATION Solar Cell Eciency Tables (Version 11) Martin A. Green,1,* Keith Emery,2 Klaus Bu cher,3 David L. King4 and Sanekazu Igari5 1Photovoltaics Special Research Centre, University of New South Wales, Sydney 2052, Australia 2 National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401, USA 3Fraunhofer-Institut fur Solare Energiesysteme, Oltmannsstrasse 5, D-79100 Freiburg, Germany 4Division 6224, Sandia National Laboratories, 1515 Eubank Street, Albuquerque, NM 87123, USA 5 Japan Quality Assurance Organization, Solar Techno Center, Solar Cell Test Research Division, HIC Bldg. 2F, 4598 Murakushi-Cho, Hamamatsu-shi, Shizouka-ken 431-12, Japan Consolidated tables showing an extensive listing of the highest independently con- 速rmed eciencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined, and new entries since June 1997 are brie俗y described. # 1998 John Wiley & Sons, Ltd. INTRODUCTION Since January 1993, Progress in Photovoltaics has published 6-monthly listings of the highest con速rmed eciencies for a range of photovoltaic cell and module technologies.1賊10 By establishing guidelines for the inclusion of results into these tables, this not only provides an authoritative summary of the current state of the art but also encourages researchers to seek independent con速rmation of results and to report results on a standardized basis. Brie俗y, the main criterion for inclusion of results in these tables is that they be measured at one of the designated test centres listed previously6,7 under standardized test conditions. A distinction is also made between three dierent cell area measurements: total area, aperture area and designated illumination area.1,2 `Active area' eciency measurements are not included. (This explains some of the dierences between results reported here and in the literature, for example, with recent tandem amorphous Si cell results.) There are also certain minimum values of area encouraged for the dierent cell types, although some discretion is exercised here (0.05 cm2 for a concentrator cell, 0.25 cm2 for a tandem cell, 1 cm2 for a 1-sun cell and 800 cm2 for a module). NEW RESULTS Highest con速rmed cell and module results are reported in Tables I賊III. Any changes in the tables from those published previously10 are set in bold type. Table I summarizes the best measurements for cells and submodules, Table II shows the best results for modules and Table III shows the best results for con- centrator cells and concentrator modules. Table IV contains what might be described as `notable excep- tions'. While not conforming to the requirements to be recognized as a class record, the cells and modules in Table IV have notable characteristics that will be of interest to sections of the photovoltaic community. Possibly as a result of the large number of `last-minute' results reported in the previous issue of these tables,10 relatively few new results were received in time for inclusion in the present version of the tables. Research CCC 1062賊7995/98/010035賊08$17.50 Received 5 December 1997 # 1998 John Wiley & Sons, Ltd. Revised 5 December 1997 * Correspondence to: M. A. Green, Photovoltaics Special Research Centre, University of New South Wales, Sydney 2052, Australia PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt. Res. Appl., 6, 35賊42 (1998)
Table I. Con速rmed terrestrial cell and submodule eciencies measured under the global AM1.5 spectrum (1000 W m72 ) at 258C Classi速cationa Ec.b (%) Areac (cm2) VOC (V) JSC (mA cm2) FFd (%) Test centree (and date) Description Silicon cells Si (crystalline) 24.0 4.00 (ap) 0.709 40.9 82.7 Sandia (9/94) UNSW PERL11 Si (multicrystalline) 18.6+ 0.6 1.0 (ap) 0.636 36.5 80.4 NREL (12/95) Georgia Tech/HEM12 Si (supported 速lm) 16.6+ 0.5 0.98 (ap) 0.608 33.5 81.5 NREL (3/97) AstroPower (Si-Film)13 III賊V cells GaAs (crystalline) 25.1+ 0.8 3.91 (t) 1.022 28.2 87.1 NREL (3/90) Kopin, AlGaAs window GaAs (thin 速lm) 23.3+ 0.7 4.00 (ap) 1.011 27.6 83.8 NREL (4/90) Kopin, 5-mm CLEFT14 GaAs (multicrystalline) 18.2+ 0.5 4.011 (t) 0.994 23.0 79.7 NREL (11/95) RTI, Ge substrate15 InP (crystalline) 21.9+ 0.7 4.02 (t) 0.878 29.3 85.4 NREL (4/90) Spire, epitaxial16 Polycrystalline thin 速lm CdTe (cell) 16.0+ 0.2 1.0 (ap) 0.840 26.1 73.1 JQA (3/97) Matsushita, 3.5-mm CSS CdTe (submodule) 10.6+ 0.3 63.8 (ap) 6.565 2.26 71.4 NREL (2/95) ANTEC17 CIGS (cell) 16.4+ 0.5 1.025 (t) 0.678 32.0 75.8 NREL (11/94) NREL, CIGS on glass18 CIGS (submodule) 14.2+ 0.2 51.7 (ap) 6.808 3.1 68.3 JQA (10/96) Showa Shell19 Amorphous Si a-Si (cell)f 12.7+ 0.4 1.0 (da) 0.887 19.4 74.1 JQA (4/92) Sanyo20 a-Si (submodule)f 12.0+ 0.4 100 (ap) 12.5 1.3 73.5 JQA (12/92) Sanyo21 Photochemical Nanocrystalline dye 6.5+ 0.3 1.6 (ap) 0.769 13.4 63.0 FhG-ISE (1/97) INAP Multijunction cells GaInP/GaAs 30.3 4.0 (t) 2.488 14.22 85.6 JQA (4/96) Japan Energy (monolithic)22 GaAs/CIS (thin 速lm) 25.8+ 1.3 4.00 (t) 賊 賊 賊 NREL (11/89) Kopin/Boeing (4-terminal)14 a-Si/CIGS (thin 速lm)f 14.6+ 0.7 2.40 (ap) 賊 賊 賊 NREL (6/88) ARCO (4-terminal)23 a-Si/a-Si/a-SiGef 13.5+ 0.7 0.27 (da) 2.375 7.72 74.4 NREL (10/96) USSC (monolithic)24 aCIGS CuInGaSe2 ; a-Si amorphous silicon/hydrogen alloy. bEc. eciency. c (ap) aperture area; (t) total area; (da) designated illumination area. d FF 速ll factor. eFhG-ISE Fraunhofer-Institut fu r Solare Energiesysteme; JQA Japan Quality Assurance. fUnstabilized results. # 1998 John Wiley & Sons, Ltd. Prog. Photovolt. Res. Appl., 6, 35賊42 (1998) 36 M. A. GREEN ET AL.
Table II. Con速rmed terrestrial module eciencies measured under the global AM1.5 spectrum (1000 W m72 ) at a cell temperature of 258C Classi速cationa Ec.b (%) Areac (cm2 ) VOC (V) ISC (A) FFd (%) Test centre (and date) Description Si (crystalline) 22.7 778 (da) 5.60 3.93 80.3 Sandia (9/96) UNSW/Gochermann25 Si (multicrystalline) 15.3 1017 (ap) 14.6 1.36 78.6 Sandia (10/94) Sandia/HEM26 CIGSS 11.1+ 0.6 3665 (ap) 26.01 2.32 57.4 NREL (4/97) Siemens Solar CdTe 9.2+ 0.5 3366 (ap) 45.59 1.10 62.1 NREL (4/97) Golden Photon a-Si/a-SiGe/a-SiGe (tandem)e 10.2+ 0.5 903 (ap) 2.32 6.47 61.2 NREL (12/93) USSC27 aCIGSS CuInGaSSe; a-Si amorphous silicon/hydrogen alloy; a-SiGe amorphous silicon/germanium/hydrogen alloy. b Ec. eciency. c (ap) aperture area; (da) designated illumination area. dFF 速ll factor. eStabilized results. # 1998 John Wiley & Sons, Ltd. Prog. Photovolt. Res. Appl., 6, 35賊42 (1998) SOLAR CELL EFFICIENCY TABLES 37
Table III. Terrestrial concentrator cell and module eciencies measured under the direct beam AM1.5 spectrum at a cell temperature of 258C Classi速cation Ec.a (%) Areab (cm2 ) Concentrationc (suns) Test centre (and date) Description Single cells GaAs 27.6 0.126 (da) 255 Sandia (5/91) Spire28 GaInAsP 27.5+ 1.4 0.075 (da) 171 NREL (2/91) NREL, Entech cover InP 24.3+ 1.2 0.075 (da) 99 NREL (2/91) NREL, Entech cover29 Si 26.8 1.60 (da) 96 FhG-ISE (10/95) SunPower back-contact30 Si (large) 21.6 20.0 (da) 11 Sandiad (9/90) UNSW laser-grooved31 GaAs (Si substrate) 21.3 0.126 (da) 237 Sandia (5/91) Spire28 InP (GaAs substrate) 21.0+ 1.1 0.075 (ap) 88 NREL (2/91) NREL, Entech cover32 Multijunction cells GaAs/GaSb 32.6 0.053 (da) 100 Sandiad (10/89) Boeing, mechanical stack33 InP/GaInAs 31.8+ 1.6 0.063 (da) 50 NREL (8/90) NREL, monolithic 3-terminal34 GaAs/GaInAsP 30.2+ 1.5 0.053 (da) 40 NREL (10/90) NREL, stacked 4-terminal34 GaInP/GaAs 30.2 0.103 (da) 180 Sandia (3/94) NREL, monolithic 2-terminal35 GaAs/Si 29.6 0.317 (da) 350 Sandiad (9/88) Varian/Stanford/Sandia, mech. stack36 Submodules GaAs/GaSb 25.1 41.4 (ap) 57 Sandia (3/93) Boeing, 3 mech. stack units Modules Si 20.3 1875 (ap) 80 Sandia (4/89) Sandia/UNSW/ENTECH (12 cells)37 a E. eciency. b(da) designated illumination area; (ap) aperture area. cOne sun corresponds to an intensity of 1000 W m72. d Measurements corrected from originally measured values due to Sandia recalibration in January 1991. # 1998 John Wiley & Sons, Ltd. Prog. Photovolt. Res. Appl., 6, 35賊42 (1998) 38 M. A. GREEN ET AL.
Table IV. `Notable Exceptions': con速rmed cell and module results, not class records (global AM1.5 spectrum, 1000 W m72 , 258C) Classi速cationa Ec.b (%) Areac (cm2) VOC (V) JSC (mA cm72) FF (%) Test centre (and date) Description Single cells (silicon) Si (moderate area) 23.7 22.1 (da) 0.704 41.5 81.0 Sandia (8/96) UNSW PERL25 Si (Cz crystalline) 22.0+ 0.4 4.0 (ap) 0.681 41.8 77.2 FhG-ISE (11/96) Fraunhofer ISE, Cz substrate38 Si (thin crystalline) 21.5 4.044 (ap) 0.699 37.9 81.1 Sandia (8/95) UNSW (47 mm thick)39 Si (on oxide) 19.2+ 0.4 4.0 (ap) 0.668 37.1 77.5 FhG-ISE (4/97) FhG-ISE (46 m m m m mm thick, front contacted)40 Si (multicrystalline) 17.4+ 0.4 21.2 (t) 0.637 34.4 79.2 FhG-ISE (3/97) Fraunhofer ISE, Eurosolare wafer41 Si (large multicrystalline) 17.2+ 0.3 100 (t) 0.610 36.4 77.7 JQA (3/93) Sharp (mech. textured)42 Si (supported thin 速lm) 11.0+ 0.3 1.00 (ap) 0.570 25.6 75.5 FhG-ISE (5/97) ASE/ISE (30 mm on SiC-graphite)43 Si (thin 速lm on glass) 9.4+ 0.2 1.0 (ap) 0.480 26.1 74.8 JQA (2/97) Kaneka (3.5 mm on glass) Si (large thin 速lm) 16.0+ 0.2 95.8 (ap) 0.589 35.6 76.3 JQA (2/97) Mitubishi VEST (77 mm thick) Single cells (other) GaAs (Ge substrate) 24.3+ 0.7 4.00 (t) 1.035 27.6 85.3 NREL (3/89) ASEC, AlGaAs window44 CIGS (thin 速lm) 17.7+ 0.5 0.413 (t) 0.674 34.0 71.2 NREL (3/96) NREL, CIGS on glass45 Photoelectrochemical 11.0+ 0.5 0.25 (ap) 0.795 19.4 71.0 FhG-ISE (12/96) EPFL, nanocrystalline dye Modules Si (Spheral2 module) 10.3+ 0.5 3931 (ap) 20.1 0.692 73.6 NREL (9/94) Texas Instruments46 CdTe (large) 9.1+ 0.5 6728 (ap) 95.0 0.966 66.8 NREL (4/96) Solar Cells, Inc.47 aCIGS CuInGaSe2 . b Ec. eciency. c (ap) aperture area; (t) total area; (da) designated illumination area. # 1998 John Wiley & Sons, Ltd. Prog. Photovolt. Res. Appl., 6, 35賊42 (1998) SOLAR CELL EFFICIENCY TABLES 39
The opportunity has been taken to streamline the tables by reducing the number of sub-categories in Tables I and II, removing several entries to the Table IV `Notable Exceptions'. A literature reference for many of the entries has also been provided. Error estimates for eciency results have also been included where available from the relevant testing centre in time for publication. One new result included in Table I is the 速rst reported measurement for a nanocrystalline dye solar cell of area larger than 1 cm2 . This 1.6-cm2 device, fabricated by the Institut fu r Angewandte Photovoltaik (INAP), was measured by the Fraunhofer-Institut fu r Solare Energiesysteme (FhG-ISE) to have an eciency of 6.5%. In Table IV, a new eciency mark of 17.4% has also been demonstrated by a moderate area multicrystalline silicon solar cell fabricated and measured by the Fraunhofer-Institut using substrates provided by Eurosolare. DISCLAIMER While the information provided in the tables is provided in good faith, the authors, editors and publishers cannot accept direct responsibility for any errors or omissions. REFERENCES 1. M. A. Green and K. Emery, `Solar cell eciency tables', Prog. Photovolt. Res. Appl., 1, 25賊29 (1993). 2. M. A. Green and K. Emery, `Solar cell eciency tables (version 2)', Prog. Photovolt. Res. Appl., 1, 225賊228 (1993). 3. M. A. Green and K. Emery, `Solar cell eciency tables (version 3)', Prog. Photovolt. Res. Appl., 2, 27賊34 (1994). 4. M. A. Green and K. Emery, `Solar cell eciency tables (version 4)', Prog. Photovolt. Res. Appl., 2, 231賊234 (1994). 5. M. A. Green, K. Emery, K. Bu cher and D. L. King, `Solar cell eciency tables (version 5)', Prog. Photovolt. Res. Appl., 3, 51賊55 (1995). 6. M. A. Green, K. Emery, K. Bu cher and D. L. King, `Solar cell eciency Tables (version 6)', Prog. Photovolt. Res. Appl., 3, 229賊233 (1995). 7. M. A. Green, K. Emery, K. Bu cher and D. L. King, `Solar cell eciency tables (version 7)', Prog. Photovolt. Res. Appl., 4, 59賊62 (1996). 8. M. A. Green, K. Emery, K. Bu cher, D. L. King and S. Igari, `Solar cell eciency tables (version 8)', Prog. Photovolt. Res. Appl., 4, 321賊325 (1996). 9. M. A. Green, K. Emery, K. Bu cher, D. L. King and S. Igari, `Solar cell eciency tables (version 9)', Prog. Photovolt. Res. Appl., 5, 51賊54 (1997). 10. M. A. Green, K. Emery, K. Bu cher, D. L. King and S. Igari, `Solar cell eciency tables (version 10)', Prog. Photovolt. Res. Appl., 5, 265賊268 (1997). 11. J. Zhao, A. Wang, P. Altermatt and M. A. Green, `24% Ecient silicon solar cells with double layer anti- re俗ection coatings and reduced resistance loss', Appl. Phys. Lett., 66, 3636賊3638 (1995). 12. A. Rohatgi, S. Narasimha, S. Kamra, P. Doshi, C. P. Khattak, K. Emery and H. Field, `Record high 18.6% ecient solar cell on HEM multicrystalline material', Conf. Rec. 25th IEEE Photovoltaic Specialists Conference, Washington, May 1997, pp. 741賊744. 13. Y. Bai, D. H. ford, J. Rand and A. Barnett, `16.6% Ecient Silicon-Film2 polycrystalline silicon solar cell', Conf. Rec. 26th IEEE Photovoltaic Specialists Conference, Anaheim, September/October 1997, in print. 14. R. P. Gale, R. W. McClelland, D. B. Dingle, J. V. Gormley, R. M. Burgess, N. P. Kim, R. A. Mickelsen and B. J. Stanbery, `High-eciency GaAs/CuInSe2 and AlGaAs/CuInSe2 thin-速lm tandem solar cells', Conf. Rec. 21st IEEE Photovoltaic Specialists Conference, Kissimimee, May 1990, pp. 53賊57. 15. R. Venkatasubramanian, B. C. O'Quinn, J. S. Hills, P. R. Sharps, M. L. Timmons, J. A. Hutchby, H. Field, A. Ahrenkiel and B. Keyes, `18.2% (AM 1.5) Ecient GaAs solar cell on optical-grade polycrystalline Ge sub- strate', Conf. Rec. 25th IEEE Photovoltaic Specialists Conference, Washington, May 1997, pp. 31賊36. 16. C. J. Keavney, V. E. Haven and S. M. Vernon, `Emitter structures in MOCVD InP solar cells', Conf. Rec. 21st IEEE Photovoltaic Specialists Conference, Kissimimee, May 1990, pp. 141賊144. # 1998 John Wiley & Sons, Ltd. Prog. Photovolt. Res. Appl., 6, 35賊42 (1998) 40 M. A. GREEN ET AL.
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Solar cell eciency tables (version 11)

  • 1. SHORT COMMUNICATION Solar Cell Eciency Tables (Version 11) Martin A. Green,1,* Keith Emery,2 Klaus Bu cher,3 David L. King4 and Sanekazu Igari5 1Photovoltaics Special Research Centre, University of New South Wales, Sydney 2052, Australia 2 National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401, USA 3Fraunhofer-Institut fur Solare Energiesysteme, Oltmannsstrasse 5, D-79100 Freiburg, Germany 4Division 6224, Sandia National Laboratories, 1515 Eubank Street, Albuquerque, NM 87123, USA 5 Japan Quality Assurance Organization, Solar Techno Center, Solar Cell Test Research Division, HIC Bldg. 2F, 4598 Murakushi-Cho, Hamamatsu-shi, Shizouka-ken 431-12, Japan Consolidated tables showing an extensive listing of the highest independently con- 速rmed eciencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined, and new entries since June 1997 are brie俗y described. # 1998 John Wiley & Sons, Ltd. INTRODUCTION Since January 1993, Progress in Photovoltaics has published 6-monthly listings of the highest con速rmed eciencies for a range of photovoltaic cell and module technologies.1賊10 By establishing guidelines for the inclusion of results into these tables, this not only provides an authoritative summary of the current state of the art but also encourages researchers to seek independent con速rmation of results and to report results on a standardized basis. Brie俗y, the main criterion for inclusion of results in these tables is that they be measured at one of the designated test centres listed previously6,7 under standardized test conditions. A distinction is also made between three dierent cell area measurements: total area, aperture area and designated illumination area.1,2 `Active area' eciency measurements are not included. (This explains some of the dierences between results reported here and in the literature, for example, with recent tandem amorphous Si cell results.) There are also certain minimum values of area encouraged for the dierent cell types, although some discretion is exercised here (0.05 cm2 for a concentrator cell, 0.25 cm2 for a tandem cell, 1 cm2 for a 1-sun cell and 800 cm2 for a module). NEW RESULTS Highest con速rmed cell and module results are reported in Tables I賊III. Any changes in the tables from those published previously10 are set in bold type. Table I summarizes the best measurements for cells and submodules, Table II shows the best results for modules and Table III shows the best results for con- centrator cells and concentrator modules. Table IV contains what might be described as `notable excep- tions'. While not conforming to the requirements to be recognized as a class record, the cells and modules in Table IV have notable characteristics that will be of interest to sections of the photovoltaic community. Possibly as a result of the large number of `last-minute' results reported in the previous issue of these tables,10 relatively few new results were received in time for inclusion in the present version of the tables. Research CCC 1062賊7995/98/010035賊08$17.50 Received 5 December 1997 # 1998 John Wiley & Sons, Ltd. Revised 5 December 1997 * Correspondence to: M. A. Green, Photovoltaics Special Research Centre, University of New South Wales, Sydney 2052, Australia PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt. Res. Appl., 6, 35賊42 (1998)
  • 2. Table I. Con速rmed terrestrial cell and submodule eciencies measured under the global AM1.5 spectrum (1000 W m72 ) at 258C Classi速cationa Ec.b (%) Areac (cm2) VOC (V) JSC (mA cm2) FFd (%) Test centree (and date) Description Silicon cells Si (crystalline) 24.0 4.00 (ap) 0.709 40.9 82.7 Sandia (9/94) UNSW PERL11 Si (multicrystalline) 18.6+ 0.6 1.0 (ap) 0.636 36.5 80.4 NREL (12/95) Georgia Tech/HEM12 Si (supported 速lm) 16.6+ 0.5 0.98 (ap) 0.608 33.5 81.5 NREL (3/97) AstroPower (Si-Film)13 III賊V cells GaAs (crystalline) 25.1+ 0.8 3.91 (t) 1.022 28.2 87.1 NREL (3/90) Kopin, AlGaAs window GaAs (thin 速lm) 23.3+ 0.7 4.00 (ap) 1.011 27.6 83.8 NREL (4/90) Kopin, 5-mm CLEFT14 GaAs (multicrystalline) 18.2+ 0.5 4.011 (t) 0.994 23.0 79.7 NREL (11/95) RTI, Ge substrate15 InP (crystalline) 21.9+ 0.7 4.02 (t) 0.878 29.3 85.4 NREL (4/90) Spire, epitaxial16 Polycrystalline thin 速lm CdTe (cell) 16.0+ 0.2 1.0 (ap) 0.840 26.1 73.1 JQA (3/97) Matsushita, 3.5-mm CSS CdTe (submodule) 10.6+ 0.3 63.8 (ap) 6.565 2.26 71.4 NREL (2/95) ANTEC17 CIGS (cell) 16.4+ 0.5 1.025 (t) 0.678 32.0 75.8 NREL (11/94) NREL, CIGS on glass18 CIGS (submodule) 14.2+ 0.2 51.7 (ap) 6.808 3.1 68.3 JQA (10/96) Showa Shell19 Amorphous Si a-Si (cell)f 12.7+ 0.4 1.0 (da) 0.887 19.4 74.1 JQA (4/92) Sanyo20 a-Si (submodule)f 12.0+ 0.4 100 (ap) 12.5 1.3 73.5 JQA (12/92) Sanyo21 Photochemical Nanocrystalline dye 6.5+ 0.3 1.6 (ap) 0.769 13.4 63.0 FhG-ISE (1/97) INAP Multijunction cells GaInP/GaAs 30.3 4.0 (t) 2.488 14.22 85.6 JQA (4/96) Japan Energy (monolithic)22 GaAs/CIS (thin 速lm) 25.8+ 1.3 4.00 (t) 賊 賊 賊 NREL (11/89) Kopin/Boeing (4-terminal)14 a-Si/CIGS (thin 速lm)f 14.6+ 0.7 2.40 (ap) 賊 賊 賊 NREL (6/88) ARCO (4-terminal)23 a-Si/a-Si/a-SiGef 13.5+ 0.7 0.27 (da) 2.375 7.72 74.4 NREL (10/96) USSC (monolithic)24 aCIGS CuInGaSe2 ; a-Si amorphous silicon/hydrogen alloy. bEc. eciency. c (ap) aperture area; (t) total area; (da) designated illumination area. d FF 速ll factor. eFhG-ISE Fraunhofer-Institut fu r Solare Energiesysteme; JQA Japan Quality Assurance. fUnstabilized results. # 1998 John Wiley & Sons, Ltd. Prog. Photovolt. Res. Appl., 6, 35賊42 (1998) 36 M. A. GREEN ET AL.
  • 3. Table II. Con速rmed terrestrial module eciencies measured under the global AM1.5 spectrum (1000 W m72 ) at a cell temperature of 258C Classi速cationa Ec.b (%) Areac (cm2 ) VOC (V) ISC (A) FFd (%) Test centre (and date) Description Si (crystalline) 22.7 778 (da) 5.60 3.93 80.3 Sandia (9/96) UNSW/Gochermann25 Si (multicrystalline) 15.3 1017 (ap) 14.6 1.36 78.6 Sandia (10/94) Sandia/HEM26 CIGSS 11.1+ 0.6 3665 (ap) 26.01 2.32 57.4 NREL (4/97) Siemens Solar CdTe 9.2+ 0.5 3366 (ap) 45.59 1.10 62.1 NREL (4/97) Golden Photon a-Si/a-SiGe/a-SiGe (tandem)e 10.2+ 0.5 903 (ap) 2.32 6.47 61.2 NREL (12/93) USSC27 aCIGSS CuInGaSSe; a-Si amorphous silicon/hydrogen alloy; a-SiGe amorphous silicon/germanium/hydrogen alloy. b Ec. eciency. c (ap) aperture area; (da) designated illumination area. dFF 速ll factor. eStabilized results. # 1998 John Wiley & Sons, Ltd. Prog. Photovolt. Res. Appl., 6, 35賊42 (1998) SOLAR CELL EFFICIENCY TABLES 37
  • 4. Table III. Terrestrial concentrator cell and module eciencies measured under the direct beam AM1.5 spectrum at a cell temperature of 258C Classi速cation Ec.a (%) Areab (cm2 ) Concentrationc (suns) Test centre (and date) Description Single cells GaAs 27.6 0.126 (da) 255 Sandia (5/91) Spire28 GaInAsP 27.5+ 1.4 0.075 (da) 171 NREL (2/91) NREL, Entech cover InP 24.3+ 1.2 0.075 (da) 99 NREL (2/91) NREL, Entech cover29 Si 26.8 1.60 (da) 96 FhG-ISE (10/95) SunPower back-contact30 Si (large) 21.6 20.0 (da) 11 Sandiad (9/90) UNSW laser-grooved31 GaAs (Si substrate) 21.3 0.126 (da) 237 Sandia (5/91) Spire28 InP (GaAs substrate) 21.0+ 1.1 0.075 (ap) 88 NREL (2/91) NREL, Entech cover32 Multijunction cells GaAs/GaSb 32.6 0.053 (da) 100 Sandiad (10/89) Boeing, mechanical stack33 InP/GaInAs 31.8+ 1.6 0.063 (da) 50 NREL (8/90) NREL, monolithic 3-terminal34 GaAs/GaInAsP 30.2+ 1.5 0.053 (da) 40 NREL (10/90) NREL, stacked 4-terminal34 GaInP/GaAs 30.2 0.103 (da) 180 Sandia (3/94) NREL, monolithic 2-terminal35 GaAs/Si 29.6 0.317 (da) 350 Sandiad (9/88) Varian/Stanford/Sandia, mech. stack36 Submodules GaAs/GaSb 25.1 41.4 (ap) 57 Sandia (3/93) Boeing, 3 mech. stack units Modules Si 20.3 1875 (ap) 80 Sandia (4/89) Sandia/UNSW/ENTECH (12 cells)37 a E. eciency. b(da) designated illumination area; (ap) aperture area. cOne sun corresponds to an intensity of 1000 W m72. d Measurements corrected from originally measured values due to Sandia recalibration in January 1991. # 1998 John Wiley & Sons, Ltd. Prog. Photovolt. Res. Appl., 6, 35賊42 (1998) 38 M. A. GREEN ET AL.
  • 5. Table IV. `Notable Exceptions': con速rmed cell and module results, not class records (global AM1.5 spectrum, 1000 W m72 , 258C) Classi速cationa Ec.b (%) Areac (cm2) VOC (V) JSC (mA cm72) FF (%) Test centre (and date) Description Single cells (silicon) Si (moderate area) 23.7 22.1 (da) 0.704 41.5 81.0 Sandia (8/96) UNSW PERL25 Si (Cz crystalline) 22.0+ 0.4 4.0 (ap) 0.681 41.8 77.2 FhG-ISE (11/96) Fraunhofer ISE, Cz substrate38 Si (thin crystalline) 21.5 4.044 (ap) 0.699 37.9 81.1 Sandia (8/95) UNSW (47 mm thick)39 Si (on oxide) 19.2+ 0.4 4.0 (ap) 0.668 37.1 77.5 FhG-ISE (4/97) FhG-ISE (46 m m m m mm thick, front contacted)40 Si (multicrystalline) 17.4+ 0.4 21.2 (t) 0.637 34.4 79.2 FhG-ISE (3/97) Fraunhofer ISE, Eurosolare wafer41 Si (large multicrystalline) 17.2+ 0.3 100 (t) 0.610 36.4 77.7 JQA (3/93) Sharp (mech. textured)42 Si (supported thin 速lm) 11.0+ 0.3 1.00 (ap) 0.570 25.6 75.5 FhG-ISE (5/97) ASE/ISE (30 mm on SiC-graphite)43 Si (thin 速lm on glass) 9.4+ 0.2 1.0 (ap) 0.480 26.1 74.8 JQA (2/97) Kaneka (3.5 mm on glass) Si (large thin 速lm) 16.0+ 0.2 95.8 (ap) 0.589 35.6 76.3 JQA (2/97) Mitubishi VEST (77 mm thick) Single cells (other) GaAs (Ge substrate) 24.3+ 0.7 4.00 (t) 1.035 27.6 85.3 NREL (3/89) ASEC, AlGaAs window44 CIGS (thin 速lm) 17.7+ 0.5 0.413 (t) 0.674 34.0 71.2 NREL (3/96) NREL, CIGS on glass45 Photoelectrochemical 11.0+ 0.5 0.25 (ap) 0.795 19.4 71.0 FhG-ISE (12/96) EPFL, nanocrystalline dye Modules Si (Spheral2 module) 10.3+ 0.5 3931 (ap) 20.1 0.692 73.6 NREL (9/94) Texas Instruments46 CdTe (large) 9.1+ 0.5 6728 (ap) 95.0 0.966 66.8 NREL (4/96) Solar Cells, Inc.47 aCIGS CuInGaSe2 . b Ec. eciency. c (ap) aperture area; (t) total area; (da) designated illumination area. # 1998 John Wiley & Sons, Ltd. Prog. Photovolt. Res. Appl., 6, 35賊42 (1998) SOLAR CELL EFFICIENCY TABLES 39
  • 6. The opportunity has been taken to streamline the tables by reducing the number of sub-categories in Tables I and II, removing several entries to the Table IV `Notable Exceptions'. A literature reference for many of the entries has also been provided. Error estimates for eciency results have also been included where available from the relevant testing centre in time for publication. One new result included in Table I is the 速rst reported measurement for a nanocrystalline dye solar cell of area larger than 1 cm2 . This 1.6-cm2 device, fabricated by the Institut fu r Angewandte Photovoltaik (INAP), was measured by the Fraunhofer-Institut fu r Solare Energiesysteme (FhG-ISE) to have an eciency of 6.5%. In Table IV, a new eciency mark of 17.4% has also been demonstrated by a moderate area multicrystalline silicon solar cell fabricated and measured by the Fraunhofer-Institut using substrates provided by Eurosolare. DISCLAIMER While the information provided in the tables is provided in good faith, the authors, editors and publishers cannot accept direct responsibility for any errors or omissions. REFERENCES 1. M. A. Green and K. Emery, `Solar cell eciency tables', Prog. Photovolt. Res. Appl., 1, 25賊29 (1993). 2. M. A. Green and K. Emery, `Solar cell eciency tables (version 2)', Prog. Photovolt. Res. Appl., 1, 225賊228 (1993). 3. M. A. Green and K. Emery, `Solar cell eciency tables (version 3)', Prog. Photovolt. Res. Appl., 2, 27賊34 (1994). 4. M. A. Green and K. Emery, `Solar cell eciency tables (version 4)', Prog. Photovolt. Res. Appl., 2, 231賊234 (1994). 5. M. A. Green, K. Emery, K. Bu cher and D. L. King, `Solar cell eciency tables (version 5)', Prog. Photovolt. Res. Appl., 3, 51賊55 (1995). 6. M. A. Green, K. Emery, K. Bu cher and D. L. King, `Solar cell eciency Tables (version 6)', Prog. Photovolt. Res. Appl., 3, 229賊233 (1995). 7. M. A. Green, K. Emery, K. Bu cher and D. L. King, `Solar cell eciency tables (version 7)', Prog. Photovolt. Res. Appl., 4, 59賊62 (1996). 8. M. A. Green, K. Emery, K. Bu cher, D. L. King and S. Igari, `Solar cell eciency tables (version 8)', Prog. Photovolt. Res. Appl., 4, 321賊325 (1996). 9. M. A. Green, K. Emery, K. Bu cher, D. L. King and S. Igari, `Solar cell eciency tables (version 9)', Prog. Photovolt. Res. Appl., 5, 51賊54 (1997). 10. M. A. Green, K. Emery, K. Bu cher, D. L. King and S. Igari, `Solar cell eciency tables (version 10)', Prog. Photovolt. Res. Appl., 5, 265賊268 (1997). 11. J. Zhao, A. Wang, P. Altermatt and M. A. Green, `24% Ecient silicon solar cells with double layer anti- re俗ection coatings and reduced resistance loss', Appl. Phys. Lett., 66, 3636賊3638 (1995). 12. A. Rohatgi, S. Narasimha, S. Kamra, P. Doshi, C. P. Khattak, K. Emery and H. Field, `Record high 18.6% ecient solar cell on HEM multicrystalline material', Conf. Rec. 25th IEEE Photovoltaic Specialists Conference, Washington, May 1997, pp. 741賊744. 13. Y. Bai, D. H. ford, J. Rand and A. Barnett, `16.6% Ecient Silicon-Film2 polycrystalline silicon solar cell', Conf. Rec. 26th IEEE Photovoltaic Specialists Conference, Anaheim, September/October 1997, in print. 14. R. P. Gale, R. W. McClelland, D. B. Dingle, J. V. Gormley, R. M. Burgess, N. P. Kim, R. A. Mickelsen and B. J. Stanbery, `High-eciency GaAs/CuInSe2 and AlGaAs/CuInSe2 thin-速lm tandem solar cells', Conf. Rec. 21st IEEE Photovoltaic Specialists Conference, Kissimimee, May 1990, pp. 53賊57. 15. R. Venkatasubramanian, B. C. O'Quinn, J. S. Hills, P. R. Sharps, M. L. Timmons, J. A. Hutchby, H. Field, A. Ahrenkiel and B. Keyes, `18.2% (AM 1.5) Ecient GaAs solar cell on optical-grade polycrystalline Ge sub- strate', Conf. Rec. 25th IEEE Photovoltaic Specialists Conference, Washington, May 1997, pp. 31賊36. 16. C. J. Keavney, V. E. Haven and S. M. Vernon, `Emitter structures in MOCVD InP solar cells', Conf. Rec. 21st IEEE Photovoltaic Specialists Conference, Kissimimee, May 1990, pp. 141賊144. # 1998 John Wiley & Sons, Ltd. Prog. Photovolt. Res. Appl., 6, 35賊42 (1998) 40 M. A. GREEN ET AL.
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