Vlsi circuits for low power
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This document discusses various techniques to reduce power consumption in integrated circuits. It notes that early ICs were based on BJTs which had high power dissipation. MOSFETs were introduced which had lower power. It also discusses different sources of power dissipation like dynamic power, short circuit power, and leakage power. Various optimization techniques are described at different levels from transistor to system level like clock gating, voltage scaling, and dynamic power management.
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https://elysiumpro-project-center.business.site
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Google Sheet: https://docs.google.com/spreadsheets/d/1uXA07zxrUx2FCnBZWH80PpBZQrrX-2q1UBBe_0k3Yeo
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Google Document: https://docs.google.com/document/d/1BU4ZHW_41XJm2lvTq9pWYUpZILAEmF9dWEw7-DBbWoE
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Google 際際滷s: https://docs.google.com/presentation/d/1uF8q6ueJWcAnhKTQsZxLE0Bo9PwgRNwCeuGV_ZgbSyU
*-*-*-*-*-*-*-*-*-*-*-*-*-*-*-*-*-*-*-*-*-*How to Un-Obsolete Your Legacy Keypad Design
How to Un-Obsolete Your Legacy Keypad DesignEpec Engineered Technologies
油
For any number of circumstances, obsolescence risk is ever present in the electronics industry. This is especially true for human-to-machine interface hardware, such as keypads, touchscreens, front panels, bezels, etc. This industry is known for its high mix and low-volume builds, critical design requirements, and high costs to requalify hardware. Because of these reasons, many programs will face end-of-life challenges both at the component level as well as at the supplier level.
Redesigns and qualifications can take months or even years, so proactively managing this risk is the best way to deter this. If an LED is obsolete or a switch vendor has gone out of business, there are options to proceed.
In this webinar, we cover options to redesign and reverse engineer legacy keypad and touchscreen designs.
For more information on our HMI solutions, visit https://www.epectec.com/user-interfaces.
Tally.ERP 9 at a Glance.book - Tally Solutions .pdf
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Tally.ERP 9 at a Glance.book, a fully completed guidance to learn tally erp 9.0(Continuous Integration and Continuous Deployment/Delivery) is a fundamental ...
(Continuous Integration and Continuous Deployment/Delivery) is a fundamental ...ketan09101
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(Continuous Integration and Continuous Deployment/Delivery) is a fundamental practice in DevOps that streamlines software development and deployment.Complete University of Calculus :: 2nd edition
Complete University of Calculus :: 2nd editionShabista Imam
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Master the language of change with the Complete Guidance Book of Calculusyour comprehensive resource for understanding the core concepts and applications of differential and integral calculus. Designed for high school, college, and self-study learners, this book takes a clear, intuitive approach to a subject often considered challenging.Fundamentals of Digital Design_Class_12th April.pptx
Fundamentals of Digital Design_Class_12th April.pptxdrdebarshi1993
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Boolean Algebra and Combinational Logic CircuitRapid Prototyping for XR: Lecture 6 - AI for Prototyping and Research Directi...
Rapid Prototyping for XR: Lecture 6 - AI for Prototyping and Research Directi...Mark Billinghurst
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This is lecture 6 in the course on Rapid Prototyping for XR, taught on June 13th, 2025 by Mark Billinghurst. This lecture was about using AI for Prototyping and Research Directions. Tesla-Stock-Analysis-and-Forecast.pptx (1).pptx
Tesla-Stock-Analysis-and-Forecast.pptx (1).pptxmoonsony54
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this is data science ppt for tesla stock (linear regression)International Journal of Advanced Information Technology (IJAIT)
International Journal of Advanced Information Technology (IJAIT)ijait
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International journal of advanced Information technology (IJAIT) is a bi monthly open access peer-
reviewed journal, will act as a major forum for the presentation of innovative ideas, approaches,
developments, and research projects in the area advanced information technology applications and
services. It will also serve to facilitate the exchange of information between researchers and industry
professionals to discuss the latest issues and advancement in the area of advanced IT. Core areas of
advanced IT and multi-disciplinary and its applications will be covered during the conferences.Proposal for folders structure division in projects.pdf
Proposal for folders structure division in projects.pdfMohamed Ahmed
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Proposal for folders structure division in projectsAd
Vlsi circuits for low power
- 1. MOUMITA CHAKRABORTY PRABAHA ROY ANURAG ROY DEBRAJ BANERJEE
- 3. 3 PROBLEMS OF POWER CONSUMPTION HIGH POWER DISSIPATION LEADS TO:
- 4. AT THE INCEPTION,THE ICs ARE BASICALLY BJT BASED TILL 1960s..BUT THE POWER DISSIPATION OF BJT IS HUGE.
- 5. 0 YA Y is pulled low by the turned on NMOS Device. Hence NMOS is the pull-down device. VDD A Y GND 1
- 6. Y is pulled high by the turned on PMOS Device. Hence PMOS is the pull-up device. 01 YA YA VDD GND
- 7. Noted that the number of transistors per unit area had doubled every 18 months. Expected the trend to last for at least ten years
- 12. P =鐃 f CL VDD族 + VDD Ipeak(P0-1+P1-0) + VDD Ileak DYNAMIC POWER ~ TODAY AND DECREASING RELATIVELY. SHORT-CIRCUIT TODAY AND EASING ABSOLUTELY. LEAKAGE TODAY AND INCREASING.
- 13. GND Vi VDD CL Vo CL R Capacitor charging to supply voltage(VDD) by shown path and pulls up the o/p voltage. VDD Vo The amount of energy stored at the capacitor is 遜cv族,energy dissipated across resistor(internal) is also 遜cv族.
- 14. SO TOTAL ENERGY DISSIPATED IN A FULL CYCLE IS GND VDD CL Vo VDD Vo R CL At the time of Vi=1,charge stored at capacitor discharges by shown path and pulls down the o/p voltage At the time of discharging,energy dissipated across resistor also 遜v族 Vi
- 17. Short circuit power is:
- 19. +VDS +VGS n+ n+ p-substrate I1 Drain voltage is positive with respect to substrate voltage. Drain-Substrate junction acts as reverse bias p-n junction diode. Leakage current flows from drain to substrate. This is a minor contributor of leakage current.
- 24. n+ n+ p-substrate Source potential barrier lowered by high voltages on drain. Depletion region of drain merges with source depletion region. Source injects carriers without gate playing a significant role, resulting a leakage current. VGs=0 VDS
- 25. Reduced thickness increases Oxide tunneling current with increasing Overlap area GIDL increases Low threshold Increases Sub-threshold current exponentially.
- 26. GATE LEVEL ARCHITECTURE LEVEL ALGORITHM LEVEL SYSTEM LEVEL
- 27. LEVELS OF OPTIMIZATION System Algorithm Architecture Gate Transistor T T + ST1 ALU MEM MEMMP3 Savings Speed Error > 70 % 40-70 % 25-40 % 15-25 % 10-15 % Seconds Minute Minutes Hour Hours > 50 % 25-50 % 15-30 % 10-20 % 5-10 %
- 33. ALU MEM MEM MP 3
- 34. Systems are: Designed to deliver peak performance, but Not needing peak performance most of the time Components are idle sometimes Dynamic power management (DPM): Puts idle components in low-power non-operational states when idle Power manager: Observes and controls the system Power consumption of power manager is negligible