More than five years experience of nitrogen-based high-efficiency optoelectronic and high speed
device structures epitaxial growth on sapphire, Si, GaN and SiC substrate by MOCVD technology.
Profound knowledge of semiconductor processes of Light-emitting diode (LED) and Highelectron-
mobility transistor (HEMT), and mask/mold layout design. Highly experienced in optical
interconnect technology. Strong team player with excellent negotiation, communication, and
leadership skills.
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