Electronic circuits and PCB Design _ Unit 1

Jun 6, 2024Download as PPTX, PDF0 likes30 views

aartis110

PCB Design

Course outcome of Unit-1
 At the end of this unit student will get to know about the
basics of semiconductors and semiconductor devices.
2

Contents
 Classifications of Semiconductor
 Doping in Semiconductors
 Conductivity of semiconductors
 Energy Distribution and fermi level
 Carrier Concentration in intrinsic semiconductor and
Mass-Action Law
 Drift and Diffusion Current
 Einstein Relationship for semiconductors
3

Intrinsic semiconductors
 An intrinsic semiconductor is one which is made of the semiconductor
material in its extremely pure form.
Examples : Si, Ge
 The energy gap is so small that even at ordinary room temperature; there
are many electrons which possess sufficient energy to jump across the
small energy gap between the valence and the conduction bands.
 Alternatively, an intrinsic semiconductor may be defined as one in which
the number of conduction electrons is equal to the number of holes.
6

Fermi Energy and Fermi Level
 Fermi Energy
It is the maximum energy possessed by free electron at
absolute zero temperature.
 Fermi level
It is the highest energy state occupied by free electron at
absolute zero temperature.
7

Conductivity of Semiconductor 9
Where σ is the conductivity of the semiconductor.

Fermi Dirac Function
 Fermi Dirac Distribution is the probability distribution function which states
the probability of finding an electron in the given energy level.
10

Carrier Concentration in Intrinsic semiconductor 12
 In Intrinsic semiconductor when the valence electron broke covalent bond and
jump into conduction band two types of charge carriers are generated. They are
electrons and holes.
Intrinsic carrier concentration
 The number of electron per unit volume in conduction band or number of holes
per unit volume in valence band is called intrinsic carrier concentration.

Drift Current 14
 The current flow in semiconductor under the influence of electric field is
called drift current.

Diffusion Current
 The current flow in semiconductor from region of higher
concentration to the lower concentration is called diffusion
current.
15

Einstein Relationship
 The equation which relates the mobility and the diffusion constant is
known as Einstein relationship.
16

V-I Characteristic of Dual Gate MOSFET 29

Advantages of Dual Gate MOSFET
1) Reduced channel and gate leakage current at off state which
saves power.
2) Separate gate control on voltage saves power and chip area.
30

Challenges in Dual Gate MOSFET
1) Identically sized gates
2) Self alignment of source and drain to both gates
3) Alignment of both gates to each other
4) Connecting two gates with low resistance path
31

Applications of Dual Gate MOSFET
1) Mixers
2) Demodulators
3) Cascade amplifiers
4) Radio Frequency (RF) amplifier
5) Automatic Gain Control (AGC) amplifier
32

Short Gate (SG) and Insulated Gate (IG)
FET
42

Short Gate (SG) vs. Insulated Gate (IG)
FET
43

Short Gate (SG) and Insulated Gate (IG)
FET
44

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Electronic circuits and PCB Design _ Unit 1

1. ELECTRONIC SYSTEM AND PCB DESIGN(21ECC101J ) Unit-1 DR. AARTI SHARMA ASSISTANT PROFESSOR DEPARTMENT OF ECE SRM IST, DELHI NCR CAMPUS 1

2. Course outcome of Unit-1  At the end of this unit student will get to know about the basics of semiconductors and semiconductor devices. 2

3. Contents  Classifications of Semiconductor  Doping in Semiconductors  Conductivity of semiconductors  Energy Distribution and fermi level  Carrier Concentration in intrinsic semiconductor and Mass-Action Law  Drift and Diffusion Current  Einstein Relationship for semiconductors 3

4. 1. Semiconductors 4

5. 2. Doping in Semiconductors 5

6. Intrinsic semiconductors  An intrinsic semiconductor is one which is made of the semiconductor material in its extremely pure form. Examples : Si, Ge  The energy gap is so small that even at ordinary room temperature; there are many electrons which possess sufficient energy to jump across the small energy gap between the valence and the conduction bands.  Alternatively, an intrinsic semiconductor may be defined as one in which the number of conduction electrons is equal to the number of holes. 6

7. Fermi Energy and Fermi Level  Fermi Energy It is the maximum energy possessed by free electron at absolute zero temperature.  Fermi level It is the highest energy state occupied by free electron at absolute zero temperature. 7

8. Fermi Level 8

9. Conductivity of Semiconductor 9 Where σ is the conductivity of the semiconductor.

10. Fermi Dirac Function  Fermi Dirac Distribution is the probability distribution function which states the probability of finding an electron in the given energy level. 10

11. Explanation 11

12. Carrier Concentration in Intrinsic semiconductor 12  In Intrinsic semiconductor when the valence electron broke covalent bond and jump into conduction band two types of charge carriers are generated. They are electrons and holes. Intrinsic carrier concentration  The number of electron per unit volume in conduction band or number of holes per unit volume in valence band is called intrinsic carrier concentration.

13. Mass Action Law  13

14. Drift Current 14  The current flow in semiconductor under the influence of electric field is called drift current.

15. Diffusion Current  The current flow in semiconductor from region of higher concentration to the lower concentration is called diffusion current. 15

16. Einstein Relationship  The equation which relates the mobility and the diffusion constant is known as Einstein relationship. 16

17. P-N Junction Diode 17

18. 18

19. 19

20. 20

21. 21

22. BJT Configurations 22

23. MOSFET 23

24. D-MOSFET 24

25. Enhancement type MOSFET 25

26. Double Gate MOSFET 26

27. Construction of Dual Gate MOSFET 27

28. Working of Dual Gate MOSFET 28

29. V-I Characteristic of Dual Gate MOSFET 29

30. Advantages of Dual Gate MOSFET 1) Reduced channel and gate leakage current at off state which saves power. 2) Separate gate control on voltage saves power and chip area. 30

31. Challenges in Dual Gate MOSFET 1) Identically sized gates 2) Self alignment of source and drain to both gates 3) Alignment of both gates to each other 4) Connecting two gates with low resistance path 31

32. Applications of Dual Gate MOSFET 1) Mixers 2) Demodulators 3) Cascade amplifiers 4) Radio Frequency (RF) amplifier 5) Automatic Gain Control (AGC) amplifier 32

33. Fin FET . 33

34. MOSFET Scaling . 34

35. Issues in Nano MOSFETs 35

36. Issues in Nano MOSFETs 36

37. Issues in Nano MOSFETs 37

38. 38

39. Planar MOSFET VS. Fin FET 39

40. Structure of Fin FET . 40

41. Classification of Fin FET 41

42. Short Gate (SG) and Insulated Gate (IG) FET 42

43. Short Gate (SG) vs. Insulated Gate (IG) FET 43

44. Short Gate (SG) and Insulated Gate (IG) FET 44