Gioi Thieu Bo Mon
- 1. Welcome to B 担 M 担 n V 但 t L 箪 C h 但 t R a n SOLID STATEPhysics Department Truong DAI HOC KHOA HOC TU NHIEN TPHCM UNIVESITY OF SCIENCE
- 2. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Staff member Nh但n s畛
- 3. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Staff member Nh但n s畛 PGS. TS. TR畉N QUANG TRUNG Tr動畛ng b畛 m担n Ass. Prof. T R A N Q U A N G T R U N G - H e a d Ass. Prof. T R U O N G Q U A N G N G H I A PGS. TS. TR働NG QUANG NGH懲A
- 4. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Staff member Nh但n s畛 ThS. V敵 TH畛 PHT MINH MSc. V U T H I P H AT M I N H K畛 s動. 畉NG THNH CNG Eng. D A N G T H A N H C O N G
- 5. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Staff member Nh但n s畛 TS. TR畉N Vi畛T C働畛NG PhD. T R A N V I E T C U O N G TS. NGUY畛N HONG H働NG PhD. N G U Y E N H O A N G H U N G
- 6. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Staff member Nh但n s畛 TS. L TH畛Y THANH GIANG PhD. L E T H U Y T H A N H G I A N G TS. HU畛NH TR畉N M畛 HA PhD. H U Y N H T R A N M Y H O A
- 7. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Staff member Nh但n s畛 ThS. PH畉M HOI PH働NG MSc. P H A M H O A I P H U O N G ThS. HONG TH畛 THU MSc. H O A N G T H I T H U
- 8. Cezch Korean Japan Australia Singapore Canada Italia Germani We also established cooporation with a number of foreign university : 1 Physics Department, University of Moncton (Canada) 2 Nanolab Czech Technology University in Prague (Czechrepublic).; 3 Department of Physics, Latrobe University (Melbourne, Australia); 4 Faculty of Physics, Tohoku University (Sendai), Osaka University (Osaka) Japan; 5 Department of Material Science, Pusan University, Ulsan University (Korean); Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Staff member Nh但n s畛
- 9. Staff member Nh但n s畛 V TR畛NG NGH懲A England PHAN TH畛 NH働 QU畛NH Japan TR畉N MINH 畉O Korea NGUY畛N DUY KHNH Japan TR畉N V懲NH SN Canada TR畉N H畛NG NHN Korea
- 10. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Training scheme o t畉o o t畉o C畛 nh但n Th畉c s挑 Ti畉n s挑 4 5 H畛c vi棚n cao h畛c th畛c hi畛n lu畉n vn t畛t nghi畛p Th畉c s挑 hng nm
- 11. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Training scheme o t畉o Nm 3 畉i c動董ng khoa h畛c v畉t li畛u K畛 thu畉t nu担i tinh th畛 T鱈nh ch畉t c董 nhi畛t v畉t r畉n V畉t l箪 b叩n d畉n 畛ng d畛ng m叩y t鱈nh Th畛c t畉p chuy棚n 畛 1 T鱈nh ch畉t quang v畉t r畉n C担ng ngh畛 linh ki畛n b叩n d畉n Th畛c t畉p chuy棚n 畛 2 H畛 ph炭n x畉 Magnetron DC
- 12. Training scheme o t畉o H畛 nhi畛t b畛c bay H畛 spin H畛 phun nhi畛t ph但n Nm 3 畉i c動董ng khoa h畛c v畉t li畛u K畛 thu畉t nu担i tinh th畛 T鱈nh ch畉t c董 nhi畛t v畉t r畉n V畉t l箪 b叩n d畉n 畛ng d畛ng m叩y t鱈nh Th畛c t畉p chuy棚n 畛 1 T鱈nh ch畉t quang v畉t r畉n C担ng ngh畛 linh ki畛n b叩n d畉n Th畛c t畉p chuy棚n 畛 2
- 13. Training scheme o t畉o Nm 4 K畛 thu畉t ch但n kh担ng v ch畉 t畉o mng K畛 thu畉t ph但n t鱈ch ph嘆ng th鱈 nghi畛m K畛 thu畉t si棚u 但m L箪 thuy畉t m担 ph畛ng v畉t li畛u b叩n d畉n (*) V畉t li畛u c畉u tr炭c nano (*) Kh坦a lu畉n t畛t nghi畛p Plasma enhanced chemical vapor deposition (PECVD) L畉ng 畛ng h董i h坦a h畛c trong m担i tr動畛ng tng c動畛ng Plasma. H畛 o nh畉y kh鱈
- 14. Facilities Thi畉t b畛 Vacuum Multi-chambers system H畛 ch但n kh担ng li棚n hon Two thermal zone CVD system H畛 CVD 2 i畛n c畛c Air pressure Low pressure chemical vapor deposition (AP-LP CVD) L畉ng 畛ng h董i h坦a h畛c trong m担i tr動畛ng ch但n kh担ng cao.
- 15. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Facilities Thi畉t b畛
- 16. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Measurement Equipment Thi畉t b畛 o 畉c H畛 o UV-vis Working region: 190nm - 1100nm Double beam, monochromatic unit with concave grating (1200 line/mm). Data step: 0.1nm Kind of measured material: thin film, liquid, bulk. T%, R%, Abs spectra
- 17. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Measurement Equipment Thi畉t b畛 o 畉c H畛 o FTIR Working region: 15000cm-1- 80cm-1 Resolution: 1cm-1 Aperture: 0.3-10mm Kind of measured material: thin film, liquid, bulk. T%, R%, Abs spectra Determining compositions . H畛 o quang i畛n
- 18. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Working region: 300 nm 1800 nm Thin film thickness Optical constants n,k Optical anisotropic property Void on the surface or between two materials Compositions of materials Homogeneousness of materials UVISEL M200-HR460 SYSTEM Measurement Equipment Thi畉t b畛 o 畉c H畛 o Ellipsometer
- 19. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Training scheme o t畉o o t畉o C畛 nh但n Th畉c s挑 Ti畉n s挑 4 5 H畛c vi棚n cao h畛c th畛c hi畛n lu畉n vn t畛t nghi畛p Th畉c s挑 hng nm
- 20. Research 畛nh h動畛ng nghi棚n c畛u OLED Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Linh ki畛n V畉t li畛u M担 ph畛ng
- 21. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M OLED Organic Light-Emitting Diode
- 22. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Now1980s 1970s 1990s 1960s Investigated organic molecular solids : anthraceneVacuum deposition method Langmuir Blodgett technique Making amorphous thin film with high stability PVK doped with fluorescent dye molecular OLED multilayer with high radiation efficiency Better balance of charge carriers, Low operating voltage C.L.Tang R. Friend S.Forrest New kind of OLED : passive-matrix OLED, active-matrix OLED, top- emitting OLED, foldable OLED, TOLED, white OLED, ITO Mg:Al HTL ETL OLED Organic Light-Emitting Diode
- 23. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Spin coating Thermal treatment Electrode Covering Dissolving into Solvent : Concentration Solvent : Aromatic & Non-Aromatic Spin coating process with different speed Thermal treatment : different annealed temp. & ambients Metal Electrode : Thermal Evaporation method Investigating Optical, Electrical and Performance Characteristics of Monolayer & Multilayer OLED devices OLED Organic Light-Emitting Diode
- 24. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M PFO MEHPPV MEHPPV solution and thinfilm (left) and organic material for opto-electronic devices under radiation of UV light Structure, energy diagram and luminescence-voltage characteristics of MEHPPV monolayer OLED device PL spectra of PFO thinfilms annealed at different temperature Energy diagram of multilayer OLED device based on MEHPPV and PFO Luminescence-voltage characteristics of MEHPPV and PFO multilayer OLED. OUTCOMES OF Organic Light Emitting Diode RESEARCH OLED Organic Light-Emitting Diode
- 25. Research 畛nh h動畛ng nghi棚n c畛u OLED Pin m畉t tr畛i Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Linh ki畛n V畉t li畛u M担 ph畛ng
- 26. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M SOLAR Cell Pin m畉t tr畛i
- 27. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Si:H deposition PE-CVD Thermal treatment Electrode Covering Intrinsic, P, B doped Si:H thin film deposited by PE-CVD method from precursors: Silane, Phosphine, Borant and Hydrogene: Thermal treatment : different annealed temp. & ambients Metal Electrode : Thermal Evaporation method Investigating Optical, Electrical , Structure, Morphology and Performance Characteristics of pin or nip structered solar cell module Current-Voltage measurement of solar cells p-i-n structure based on Si:H thin films SOLAR Cell Pin m畉t tr畛i
- 28. 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 H 0% H 80% H 94% H 95% Nang luong vung cam (eV) (A) SEM image of Si:H films and correlative Raman spectra at different ratio of Hydrogen, corresponding to state of amorphous, micro-crystal and nano-crystal in film structure, respectively. (B) X- ray differaction spectra of Si:H films with different ratio of Hydrogen. SI:H thinfilms with different ratio of H Raman spectra of Si:H thin films (on glass) of H dilution from 1 to 5. The amorphous line is added for the ease of comparision (left) and X-ray differaction spectra of Si:H films with different ratio of Hydrogen. Current-Voltage charateristic of solarcells p-i-n structure based on Si:H thinfilms 0 20 40 60 80 100 0 20 40 60 80 100 120 Nong do hat tai 117.8 e16(cm-3) 16.29 e16 (cm-3) 3.921 e 16 (cm-3)3.386 e 16 (cm-3) Nongdohattai(e16cm-3) Phan tram H2 (%) a Carrier Concentration Band gap SOLAR Cell Pin m畉t tr畛i Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M
- 29. Research 畛nh h動畛ng nghi棚n c畛u OLED Pin m畉t tr畛i Ch畉 t畉o i畛n c畛c trong su畛t Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Linh ki畛n V畉t li畛u M担 ph畛ng
- 30. Transparent conducting film Mng trong su畛t d畉n i畛n Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M
- 31. Transparent conducting film Mng trong su畛t d畉n i畛n Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Mng Ag NWS Phun ph畛 nhi畛t ph但n i畛u ch畛nh nhi畛t 畛 畉 X畛 l箪 畉
- 32. Transparent conducting film Mng trong su畛t d畉n i畛n Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M PET Mng AGNWS M/A = 42 mg/m2
- 33. Research 畛nh h動畛ng nghi棚n c畛u OLED Pin m畉t tr畛i Ch畉 t畉o i畛n c畛c trong su畛t C畉m bi畉n nh畉y kh鱈 Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Linh ki畛n V畉t li畛u M担 ph畛ng
- 34. Gas sensor C畉m bi畉n nh畉y kh鱈 Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M
- 35. T畉o i畛n c畛c tr棚n mng rGO v d叩n d但y d畉n l棚n i畛n c畛c Linh ki畛n nh畉y kh鱈 hon ch畛nh s畛 d畛ng trong kh畉o s叩t Phun dung d畛ch s畛i nano Ag l棚n mng rGO C叩ch 2: S畛 d畛ng t叩c nh但n k畉t h畛p hydrazine + nhi畛t C叩ch 1: Ch畛 s畛 d畛ng t叩c nh但n nhi畛t S畛 d畛ng ph動董ng ph叩p b畛c bay nhi畛t D湛ng keo b畉c d叩n d但y d畉n S畛 d畛ng ph動董ng ph叩p phun nhi畛t ph但n (spray) Kh畉o s叩t nh畉y kh鱈 NH3 T畉o mng rGO (spin mng GO kh畛 mng GO theo hai c叩ch)
- 36. Gas sensor C畉m bi畉n nh畉y kh鱈 Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M X X X XKh鱈 Ar Bu畛ng t畉o h董i b畉ng b畛t kh鱈 Flowmeter (l動u l動畛ng k畉) X Van Solenoid X : tr畉ng th叩i 坦ng O : trang th叩i m畛 畉u n畛i 畛ng h畛 o Bu畛ng lm vi畛c H畛 th畛ng 動畛c i畛u khi畛n b畉ng m叩y t鱈nh Bu畛ng lm vi畛c 畛ng h畛 o
- 37. Gas sensor C畉m bi畉n nh畉y kh鱈 Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Agelectrode Agelectrode Ag NWsrGO A V
- 38. Research 畛nh h動畛ng nghi棚n c畛u OLED Pin m畉t tr畛i Ch畉 t畉o i畛n c畛c trong su畛t C畉m bi畉n nh畉y kh鱈 Chip vi l動u (Microfluidic) Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Linh ki畛n V畉t li畛u M担 ph畛ng
- 39. Microfluidic chip Chip vi l動u Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M
- 40. Microfluidic chip Chip vi l動u Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M
- 41. Research 畛nh h動畛ng nghi棚n c畛u OLED Pin m畉t tr畛i Ch畉 t畉o i畛n c畛c trong su畛t C畉m bi畉n nh畉y kh鱈 Chip vi l動u (Microfluidic) Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Linh ki畛n V畉t li畛u M担 ph畛ng
- 42. Material V畉t li畛u Graphene Oxide Graphene Graphite oxide Graphite Graphite layers Graphite Graphene
- 43. Material V畉t li畛u a) b) c) d) Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M
- 44. Polystyrene layer covered on ZnO sustrate Surface before and after removing PS layer to coat ZnO seed layer Surface image and X-ray diffraction spectrum of ZnO nanowrires grown on Graphene sheet ZnO Nanosheet (NS) ZnO NW and ZnO NS ZnO Nanorods ZnO Nanowire Growth ZnO nanowires on ZnO sheet Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Material V畉t li畛u
- 45. Research 畛nh h動畛ng nghi棚n c畛u OLED Pin m畉t tr畛i Ch畉 t畉o i畛n c畛c trong su畛t C畉m bi畉n nh畉y kh鱈 Chip vi l動u (Microfluidic) Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Linh ki畛n V畉t li畛u M担 ph畛ng
- 46. Simulation M担 ph畛ng Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M X叩c 畛nh s畛 l畛p c畛a mng
- 47. Simulation M担 ph畛ng Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M X叩c 畛nh s畛 l畛p c畛a mng
- 48. Simulation M担 ph畛ng Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M L畉p tr狸nh ch動董ng tr狸nh o nh畉y kh鱈 X X X XKh鱈 Ar Bu畛ng t畉o h董i b畉ng b畛t kh鱈 Flowmeter (l動u l動畛ng k畉) X Van Solenoid X : tr畉ng th叩i 坦ng O : trang th叩i m畛 畉u n畛i 畛ng h畛 o Bu畛ng lm vi畛c H畛 th畛ng 動畛c i畛u khi畛n b畉ng m叩y t鱈nh Bu畛ng lm vi畛c 畛ng h畛 o
- 49. Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Lm vi畛c t畉i c叩c trung t但m nghi棚n c畛u H畛c sau 畉i h畛c Du h畛c D畉y ph畛 th担ng Cezch Korean Japan Australia Singapore Canada Italia Germani
- 50. EXTRA ACTIVITIES Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M
- 51. EXTRA ACTIVITIES Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M
- 52. your decision = ??? Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M
- 53. your decision Truong DAI HOC KHOA HOC TU NHIEN TPHCM U N I V E S I T Y O F S C I E N C E V N U H C M Welcome to V畉t l箪 ch畉t r畉n