A carbon nanotube field-effect transistor (CNTFET) uses a carbon nanotube as the channel material instead of silicon. Early CNTFETs used a back-gate design with random nanotube placement, while improved top-gated and wrap-around gate designs provide better control over the channel and higher performance. CNTFETs offer advantages like high electron mobility, current density, and transconductance compared to MOSFETs due to carbon nanotubes' unique electronic properties.
This document summarizes the calculation of the electric field outside an infinitely long, thin wire carrying a uniform charge density. It first establishes the coordinate system and symmetry considerations. It then outlines the approach of calculating the electric field contribution from incremental charge elements along the wire and integrating these contributions. The calculations determine that the y- and z-components of the electric field follow an inverse relationship with distance from the wire and that the electric field exhibits cylindrical symmetry around the wire.
